跳到主要导航 跳到搜索 跳到主要内容

Shock compression of [001] single crystal silicon

  • S. Zhao
  • , E. N. Hahn
  • , B. Kad
  • , B. A. Remington
  • , E. M. Bringa
  • , M. A. Meyers*
  • *此作品的通讯作者
  • University of California at San Diego
  • Lawrence Livermore National Laboratory
  • Universidad Nacional de Cuyo
  • Consejo Nacional de Investigaciones Científicas y Técnicas

科研成果: 期刊稿件文章同行评审

摘要

Silicon is ubiquitous in our advanced technological society, yet our current understanding of change to its mechanical response at extreme pressures and strain-rates is far from complete. This is due to its brittleness, making recovery experiments difficult. High-power, short-duration, laser-driven, shock compression and recovery experiments on [001] silicon (using impedance-matched momentum traps) unveiled remarkable structural changes observed by transmission electron microscopy. As laser energy increases, corresponding to an increase in peak shock pressure, the following plastic responses are are observed: surface cleavage along {111} planes, dislocations and stacking faults; bands of amorphized material initially forming on crystallographic orientations consistent with dislocation slip; and coarse regions of amorphized material. Molecular dynamics simulations approach equivalent length and time scales to laser experiments and reveal the evolution of shock-induced partial dislocations and their crucial role in the preliminary stages of amorphization. Application of coupled hydrostatic and shear stresses produce amorphization below the hydrostatically determined critical melting pressure under dynamic shock compression.

源语言英语
页(从-至)335-341
页数7
期刊European Physical Journal: Special Topics
225
2
DOI
出版状态已出版 - 1 4月 2016
已对外发布

学术指纹

探究 'Shock compression of [001] single crystal silicon' 的科研主题。它们共同构成独一无二的学术指纹。

引用此