Self-organization of semiconductor nanocrystals by selective surface faceting

Bin Yang; Pengpeng Zhang; D. E. Savage; M. G. Lagally; Guang Hong Lu; Minghuang Huang; Feng Liu

doi:10.1103/PhysRevB.72.235413

Self-organization of semiconductor nanocrystals by selective surface faceting

Bin Yang^*
, Pengpeng Zhang
, D. E. Savage
, M. G. Lagally
, Guang Hong Lu
, Minghuang Huang
, Feng Liu

^*此作品的通讯作者

University of Wisconsin-Madison
University of Utah

科研成果: 期刊稿件 › 文章 › 同行评审

49 引用（Scopus）

摘要

The formation and ordering of Si nanocrystals in dewetting and agglomeration of the thin single crystalline Si layer in silicon-on-insulator has been investigated using low-energy electron microscopy. The evolution of the Si dewetting and agglomeration is captured in real time, revealing the detailed process for the formation and ordering of the nanocrystals. A surface faceting mechanism governing this self-organized process is proposed and supported with first-principles calculations.

源语言	英语
期刊论文编号	235413
期刊	Physical Review B - Condensed Matter and Materials Physics
卷	72
期	23
DOI	https://doi.org/10.1103/PhysRevB.72.235413
出版状态	已出版 - 15 12月 2005
已对外发布	是

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abstract = "The formation and ordering of Si nanocrystals in dewetting and agglomeration of the thin single crystalline Si layer in silicon-on-insulator has been investigated using low-energy electron microscopy. The evolution of the Si dewetting and agglomeration is captured in real time, revealing the detailed process for the formation and ordering of the nanocrystals. A surface faceting mechanism governing this self-organized process is proposed and supported with first-principles calculations.",

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AU - Yang, Bin

AU - Zhang, Pengpeng

AU - Savage, D. E.

AU - Lagally, M. G.

AU - Lu, Guang Hong

AU - Huang, Minghuang

AU - Liu, Feng

PY - 2005/12/15

Y1 - 2005/12/15

N2 - The formation and ordering of Si nanocrystals in dewetting and agglomeration of the thin single crystalline Si layer in silicon-on-insulator has been investigated using low-energy electron microscopy. The evolution of the Si dewetting and agglomeration is captured in real time, revealing the detailed process for the formation and ordering of the nanocrystals. A surface faceting mechanism governing this self-organized process is proposed and supported with first-principles calculations.

AB - The formation and ordering of Si nanocrystals in dewetting and agglomeration of the thin single crystalline Si layer in silicon-on-insulator has been investigated using low-energy electron microscopy. The evolution of the Si dewetting and agglomeration is captured in real time, revealing the detailed process for the formation and ordering of the nanocrystals. A surface faceting mechanism governing this self-organized process is proposed and supported with first-principles calculations.

UR - https://www.scopus.com/pages/publications/29744439472

U2 - 10.1103/PhysRevB.72.235413

DO - 10.1103/PhysRevB.72.235413

M3 - 文章

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SN - 1098-0121

VL - 72

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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Self-organization of semiconductor nanocrystals by selective surface faceting

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