Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

Kaigui Zhu; Wu Wang; Qingyi Shao; Dongning Zhao; Yongfeng Lu; Natale Ianno

doi:10.1063/1.3583673

Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

Kaigui Zhu^*
, Wu Wang
, Qingyi Shao
, Dongning Zhao
, Yongfeng Lu
, Natale Ianno

^*此作品的通讯作者

物理学院

Beihang University
South China Normal University
University of Nebraska-Lincoln

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

We have self-assembled regimented arrays of vertical ∼100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity.

源语言	英语
期刊论文编号	173110
期刊	Applied Physics Letters
卷	98
期	17
DOI	https://doi.org/10.1063/1.3583673
出版状态	已出版 - 25 4月 2011

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10.1063/1.3583673

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abstract = "We have self-assembled regimented arrays of vertical ∼100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity.",

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AU - Zhu, Kaigui

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AU - Shao, Qingyi

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AU - Lu, Yongfeng

AU - Ianno, Natale

PY - 2011/4/25

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AB - We have self-assembled regimented arrays of vertical ∼100 nm diameter Ge Esaki tunnel diodes using nanosphere lithography. Measurements of the current-voltage characteristics of individual nanodiodes using conductive atomic force microscopy at room temperature reveal pronounced negative differential resistance under forward bias, with a peak to valley ratio of 2-4. These diode arrays could constitute a neuromorphic circuit architecture exhibiting collective computational activity.

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M3 - 文章

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Self-assembled ordered arrays of nanoscale germanium Esaki tunnel diodes

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