Selective area epitaxial growth of InP nanowire array for solar cell applications

Q. Gao; L. Fu; F. Wang; Y. Guo; Z. Y. Li; K. Peng; Li Li; Z. Li; Y. Wenas; S. Mokkapati; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2014.7038704

Selective area epitaxial growth of InP nanowire array for solar cell applications

Q. Gao
, L. Fu
, F. Wang
, Y. Guo
, Z. Y. Li
, K. Peng
, Li Li
, Z. Li
, Y. Wenas
, S. Mokkapati
, H. H. Tan
, C. Jagadish

Australian National University

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

1 引用（Scopus）

摘要

InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

源语言	英语
主期刊名	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
编辑	Mariusz Martyniuk, Lorenzo Faraone
出版商	Institute of Electrical and Electronics Engineers Inc.
页	252-253
页数	2
ISBN（电子版）	9781479968671
DOI	https://doi.org/10.1109/COMMAD.2014.7038704
出版状态	已出版 - 10 2月 2014
已对外发布	是
活动	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, 澳大利亚期限: 14 12月 2014 → 17 12月 2014

丛书

姓名	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

会议

会议	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
国家/地区	澳大利亚
市	Perth
时期	14/12/14 → 17/12/14

联合国可持续发展目标

此成果有助于实现下列可持续发展目标：

可持续发展目标 7 经济适用的清洁能源

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10.1109/COMMAD.2014.7038704

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引用此

Gao, Q., Fu, L., Wang, F., Guo, Y., Li, Z. Y., Peng, K., Li, L., Li, Z., Wenas, Y., Mokkapati, S., Tan, H. H., & Jagadish, C. (2014). Selective area epitaxial growth of InP nanowire array for solar cell applications. 在 M. Martyniuk, & L. Faraone (版本), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 (页码 252-253). 期刊论文 7038704 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2014.7038704

Gao, Q. ; Fu, L. ; Wang, F. 等. / Selective area epitaxial growth of InP nanowire array for solar cell applications. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. 编辑 / Mariusz Martyniuk ; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. 页码 252-253 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

@inproceedings{3b9160a3f48d468480128cb4e9f1133b,

title = "Selective area epitaxial growth of InP nanowire array for solar cell applications",

abstract = "InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.",

keywords = "MOCVD, nanowire, selective area epitaxy, solar cell",

author = "Q. Gao and L. Fu and F. Wang and Y. Guo and Li, \{Z. Y.\} and K. Peng and Li Li and Z. Li and Y. Wenas and S. Mokkapati and Tan, \{H. H.\} and C. Jagadish",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

year = "2014",

month = feb,

day = "10",

doi = "10.1109/COMMAD.2014.7038704",

language = "英语",

series = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "252--253",

editor = "Mariusz Martyniuk and Lorenzo Faraone",

booktitle = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

address = "美国",

}

Gao, Q, Fu, L, Wang, F, Guo, Y, Li, ZY, Peng, K, Li, L, Li, Z, Wenas, Y, Mokkapati, S, Tan, HH & Jagadish, C 2014, Selective area epitaxial growth of InP nanowire array for solar cell applications. 在 M Martyniuk & L Faraone (版本), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014., 7038704, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Institute of Electrical and Electronics Engineers Inc., 页码 252-253, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, 澳大利亚, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038704

Selective area epitaxial growth of InP nanowire array for solar cell applications. / Gao, Q.; Fu, L.; Wang, F. 等.
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. 编辑 / Mariusz Martyniuk; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. 页码 252-253 7038704 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Selective area epitaxial growth of InP nanowire array for solar cell applications

AU - Gao, Q.

AU - Fu, L.

AU - Wang, F.

AU - Guo, Y.

AU - Li, Z. Y.

AU - Peng, K.

AU - Li, Li

AU - Li, Z.

AU - Wenas, Y.

AU - Mokkapati, S.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2014/2/10

Y1 - 2014/2/10

N2 - InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

AB - InP nanowire arrays have been grown and optimized using selective area epitaxy by metalorganic chemical vapour deposition technique. High quality stacking fault free wurtzite nanowires with a wide range of diameters and room temperature minority carrier lifetime as high as ∼ 1.6 ns have been obtained. An axially doped n-i-p structure was further grown and successfully fabricated into solar cell devices. The photovoltaic behaviors of the device have been investigated and compared to simulation results.

KW - MOCVD

KW - nanowire

KW - selective area epitaxy

KW - solar cell

UR - https://www.scopus.com/pages/publications/84983201169

U2 - 10.1109/COMMAD.2014.7038704

DO - 10.1109/COMMAD.2014.7038704

M3 - 会议稿件

AN - SCOPUS:84983201169

T3 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

SP - 252

EP - 253

BT - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

A2 - Martyniuk, Mariusz

A2 - Faraone, Lorenzo

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Y2 - 14 December 2014 through 17 December 2014

ER -

Gao Q, Fu L, Wang F, Guo Y, Li ZY, Peng K 等. Selective area epitaxial growth of InP nanowire array for solar cell applications. 在 Martyniuk M, Faraone L, 编辑, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 页码 252-253. 7038704. (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). doi: 10.1109/COMMAD.2014.7038704

Selective area epitaxial growth of InP nanowire array for solar cell applications

摘要

丛书

会议

联合国可持续发展目标

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