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Robust ferromagnetism of single crystalline CoxZn1-xO (0.3 ≤ x ≤0.45) epitaxial films with high Co concentration

  • Qiang Cao*
  • , Dapeng Zhu
  • , Maoxiang Fu
  • , Li Cai
  • , Ping Yang
  • , Shuang Li
  • , Yinlian Zhu
  • , Xiuliang Ma
  • , Guolei Liu
  • , Yanxue Chen
  • , Shishen Yan
  • , Liangmo Mei
  • , Xiaolin Wang
  • *此作品的通讯作者
  • Shandong University
  • Qufu Normal University
  • National University of Singapore
  • CAS - Institute of Metal Research
  • University of Wollongong

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

In contrast to conventional dilute magnetic semiconductors with concentrations of magnetic ions of just a few percent, here, we report the fabrication of epitaxial CoxZn1-xO single crystalline films with Co concentrations from x = 0.3 up to 0.45 by radio-frequency oxygen-plasma-assisted molecular beam epitaxy. The films retain their single crystalline wurtzite structure without any other crystallographic phase from precipitates, based on reflection high energy electron diffraction, X-ray diffraction, transmission electron microscopy, and Raman scattering. The results of X-ray diffraction, optical transmission spectroscopy, and in-situ X-ray photoelectron spectroscopy confirm the incorporation of Co2+ cations into the wurtzite lattice. The films exhibit robust ferromagnetism and the magneto-optical Kerr effect at room temperature. The saturation magnetization reaches 265 emu/cm3 at x = 0.45, which corresponds to the average magnetic moment of 1.5 μ B per Co atom.

源语言英语
期刊论文编号052404
期刊Applied Physics Letters
卷109
期5
DOI
出版状态已出版 - 1 8月 2016
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