Residual stress and strain in CdZnTe wafer examined by X-ray diffraction methods

A non-destructive method based on X-ray diffraction was developed to measure the stress and strain in CdZnTe single crystal near the surface. From the experimental results and calculations, the residual stresses in CdZnTe single crystal were determined to be σ₁=30 MPa, σ₂=14 MPa, and τ₁₂=-4 MPa, respectively. The residual stress derived from the measurement strain in CdZnTe was thought to be composed of the thermal stress, the misfit stress, and the mechanical stress. The distributions of non-uniform strain in a CdZnTe wafer are about 3.9%, while the distributions of uniform strain in the CdZnTe wafer are 0.5%, much smaller than those of the non-uniform strain.