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Research on influence of temperature effect on silicon-on-sapphire pressure sensor by finite element method

  • Beijing Polytechnic

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

This paper systemically introduced the effect of temperature on the measuring precision for silicon-on-sapphire pressure sensor using the inner stress distribution change as the main thread of analyzing method. Firstly, using the so called Fourier's 1st law and first law of thermodynamics, the temperature distribution of sapphire diaphragm is analyzed under the function of heat conduction and heat convection in which the temperature load is applied on the titanium alloy. Then, using the 4MPa as the pressure load, the stress distribution of under the function of pressure and the function of pressure and temperature are also analyzed. It is concluded that when the applied temperature is room temperature, temperature will initiate little effect to the inner stress. Their relative error is just 1.49%. When the analyzed temperature is 200°C, the relative error is 22%, which means the temperature has great effect to the measuring precision of the sensor.

源语言英语
主期刊名Proceedings - 2019 International Conference on Electronic Engineering and Informatics, EEI 2019
出版商Institute of Electrical and Electronics Engineers Inc.
14-17
页数4
ISBN(电子版)9781728140766
DOI
出版状态已出版 - 11月 2019
活动2019 International Conference on Electronic Engineering and Informatics, EEI 2019 - Nanjing, 中国
期限: 8 11月 201910 11月 2019

出版系列

姓名Proceedings - 2019 International Conference on Electronic Engineering and Informatics, EEI 2019

会议

会议2019 International Conference on Electronic Engineering and Informatics, EEI 2019
国家/地区中国
Nanjing
时期8/11/1910/11/19

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