Recent progress on laser-assisted machining for silicon carbide materials

Silicon carbide (SiC) and SiC-based composites have been widely used in semiconductors and aerospace industries due to exceptional physicochemical properties. However, their inherent hardness and brittleness pose significant challenges for traditional processing methods—including cutting, grinding, polishing, and etching—which often fail to meet the demands for high-efficiency and high-precision machining. To overcome these limitations, this study aims to systematically investigate the mechanisms, process-performance correlations, and optimization strategies of laser-assisted machining (LAM) for SiC materials. This work presents three key insights: (1) a comparative analysis of laser-material interactions under various pulse widths and their influence on modification structure and machinability; (2) a qualitative link between material anisotropy, laser parameters, laser-induced structures and downstream mechanical/chemical processing outcomes; (3) a systematic qualitative and quantitative comparison between LAM and conventional machining methods to identify the advantages and limitations of LAM, followed by the proposal of optimal LAM routes based on current research findings. By integrating recent experimental data and process advancements, this study identifies LAM as a promising route to enhance efficiency, reduce material/tool wear, and improve surface quality in SiC material processing, while also highlighting key challenges and outlining future research directions for industrial application.