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Realisation of de Gennes’ absolute superconducting switch with a heavy metal interface

  • Hisakazu Matsuki
  • , Alberto Hijano
  • , Grzegorz P. Mazur
  • , Stefan Ilić
  • , Binbin Wang
  • , Iuliia Alekhina
  • , Kohei Ohnishi
  • , Sachio Komori
  • , Yang Li
  • , Nadia Stelmashenko
  • , Niladri Banerjee
  • , Lesley F. Cohen
  • , David W. McComb
  • , F. Sebastián Bergeret
  • , Guang Yang*
  • , Jason W.A. Robinson*
  • *此作品的通讯作者
  • University of Cambridge
  • Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU
  • University of the Basque Country
  • University of Jyväskylä
  • Delft University of Technology
  • Ohio State University
  • Kindai University
  • Nagoya University
  • Imperial College London
  • Donostia International Physics Center

科研成果: 期刊稿件文章同行评审

摘要

In 1966, Pierre-Gilles de Gennes proposed a non-volatile mechanism for switching superconductivity on and off in a magnetic device. This involved a superconductor (S) sandwiched between ferromagnetic (F) insulators in which the net magnetic exchange field could be controlled through the magnetisation-orientation of the F layers. Because superconducting switches are attractive for a range of applications, extensive studies have been carried out on F/S/F structures. Although these have demonstrated a sensitivity of the superconducting critical temperature (Tc) to parallel (P) and antiparallel (AP) magnetisation-orientations of the F layers, corresponding shifts in Tc (i.e. ΔTc = Tc,AP− Tc,P) are lower than predicted with ΔTc only a small fraction of Tc,AP, precluding the development of applications. Here, we report EuS/Au/Nb/EuS structures where EuS is an insulating ferromagnet, Nb is a superconductor and Au is a heavy metal. For P magnetisations, the superconducting state in this structure is quenched down to the lowest measured temperature of 20 mK meaning that ΔTc/Tc,AP is practically 1. The key to this so-called 'absolute switching' effect is a sizable spin-mixing conductance at the EuS/Au interface which ensures a robust magnetic proximity effect, unlocking the potential of F/S/F switches for low power electronics.

源语言英语
文章编号5674
期刊Nature Communications
16
1
DOI
出版状态已出版 - 12月 2025

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