TY - GEN
T1 - Proposal for novel magnetic memory device with spin momentum locking materials
AU - Qin, Xiaowan
AU - Zeng, Lang
AU - Gao, Tianqi
AU - Zhang, Deming
AU - Long, Mingzhi
AU - Zhang, Youguang
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/9/28
Y1 - 2017/9/28
N2 - In this work, novel magnetic memory device is proposed based on fascinating Spin Momentum Locking (SML) materials. The device utilizes direct spin current to charge current conversion and don't need Magnetic Tunneling Junction (MTJ) structure. The NOR, NAND and 3D array structure of the proposed magnetic memory device are demonstrated and discussed.
AB - In this work, novel magnetic memory device is proposed based on fascinating Spin Momentum Locking (SML) materials. The device utilizes direct spin current to charge current conversion and don't need Magnetic Tunneling Junction (MTJ) structure. The NOR, NAND and 3D array structure of the proposed magnetic memory device are demonstrated and discussed.
UR - https://www.scopus.com/pages/publications/85034748152
U2 - 10.1109/NANOARCH.2017.8053717
DO - 10.1109/NANOARCH.2017.8053717
M3 - 会议稿件
AN - SCOPUS:85034748152
T3 - Proceedings of the IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2017
SP - 45
EP - 46
BT - Proceedings of the IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2017
Y2 - 25 July 2017 through 26 July 2017
ER -