Preparation of InSb nanocrystals embedded in SiO2 thin films

Kaigui Zhu; Jianzhong Shi; Yanfeng Wel; Lide Zhang

doi:10.1007/BF02883404

Preparation of InSb nanocrystals embedded in SiO₂ thin films

Kaigui Zhu^*
, Jianzhong Shi
, Yanfeng Wel
, Lide Zhang

^*此作品的通讯作者

CAS - Institute of Solid State Physics
Fudan University

科研成果: 期刊稿件 › 文章 › 同行评审

9 引用（Scopus）

摘要

InSb nanocrystals embedded in SiO₂ thin films were prepared by rf magnetron cosputtering technique. THe observation by transmission electron microscope showed that InSb nanocrystals dispersed uniformly in SiO₂ matrices. InSb nanocrystals with different sizes can be obtained by changing the annealing condition. The average size of InSb nanocrystals depended on annealing temperature and time, but not on the t^1/3 rules. X-ray photoelectron spectroscopy and X-ray diffraction were also applied to the analyses of the composite thin films.

源语言	英语
页（从-至）	1610-1615
页数	6
期刊	Chinese Science Bulletin
卷	43
期	19
DOI	https://doi.org/10.1007/BF02883404
出版状态	已出版 - 1998
已对外发布	是

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10.1007/BF02883404

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title = "Preparation of InSb nanocrystals embedded in SiO2 thin films",

abstract = "InSb nanocrystals embedded in SiO2 thin films were prepared by rf magnetron cosputtering technique. THe observation by transmission electron microscope showed that InSb nanocrystals dispersed uniformly in SiO2 matrices. InSb nanocrystals with different sizes can be obtained by changing the annealing condition. The average size of InSb nanocrystals depended on annealing temperature and time, but not on the t1/3 rules. X-ray photoelectron spectroscopy and X-ray diffraction were also applied to the analyses of the composite thin films.",

keywords = "InSb nanocrystals, Quantum confinement, Radio-frequency sputtering",

author = "Kaigui Zhu and Jianzhong Shi and Yanfeng Wel and Lide Zhang",

year = "1998",

doi = "10.1007/BF02883404",

language = "英语",

volume = "43",

pages = "1610--1615",

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TY - JOUR

T1 - Preparation of InSb nanocrystals embedded in SiO2 thin films

AU - Zhu, Kaigui

AU - Shi, Jianzhong

AU - Wel, Yanfeng

AU - Zhang, Lide

PY - 1998

Y1 - 1998

N2 - InSb nanocrystals embedded in SiO2 thin films were prepared by rf magnetron cosputtering technique. THe observation by transmission electron microscope showed that InSb nanocrystals dispersed uniformly in SiO2 matrices. InSb nanocrystals with different sizes can be obtained by changing the annealing condition. The average size of InSb nanocrystals depended on annealing temperature and time, but not on the t1/3 rules. X-ray photoelectron spectroscopy and X-ray diffraction were also applied to the analyses of the composite thin films.

AB - InSb nanocrystals embedded in SiO2 thin films were prepared by rf magnetron cosputtering technique. THe observation by transmission electron microscope showed that InSb nanocrystals dispersed uniformly in SiO2 matrices. InSb nanocrystals with different sizes can be obtained by changing the annealing condition. The average size of InSb nanocrystals depended on annealing temperature and time, but not on the t1/3 rules. X-ray photoelectron spectroscopy and X-ray diffraction were also applied to the analyses of the composite thin films.

KW - InSb nanocrystals

KW - Quantum confinement

KW - Radio-frequency sputtering

UR - https://www.scopus.com/pages/publications/0542399650

U2 - 10.1007/BF02883404

DO - 10.1007/BF02883404

M3 - 文章

AN - SCOPUS:0542399650

SN - 1001-6538

VL - 43

SP - 1610

EP - 1615

JO - Chinese Science Bulletin

JF - Chinese Science Bulletin

IS - 19

ER -

Preparation of InSb nanocrystals embedded in SiO2 thin films

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Preparation of InSb nanocrystals embedded in SiO₂ thin films