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Physical origin of hafnium-based ferroelectricity

  • Shuning Lv
  • , Tengfei Cao
  • , Zihe Wang
  • , Tingxiao Xie
  • , Shuang Gao
  • , Gilberto Teobaldi
  • , Qi Hu*
  • , Li Min Liu
  • *此作品的通讯作者
  • Beihang University
  • Northwestern Polytechnical University Xian
  • Rutherford Appleton Laboratory

科研成果: 期刊稿件文献综述同行评审

摘要

This review presents an overview of the developmental history of hafnium-based ferroelectric materials and their various potential applications. It delves into the origins of hafnium-based ferroelectric phases and summarizes recent research advancements from thermodynamic and kinetic perspectives. Additionally, it explores the crystal structures of hafnium-based ferroelectric materials, phase transition mechanisms influenced by phonons, polarization reversal, and the dynamic evolutions of ferroelectric domain boundaries. The review further examines different methods for controlling the stability and optimizing the performance of hafnium-based ferroelectric phases, including doping, stress modulation, oxygen vacancies, and interface effects. These techniques are vital for stabilizing the necessary ferroelectric phases and enhancing the electrical properties of the material significantly. By establishing a connection between theoretical and experimental studies of the origins of hafnium-based ferroelectrics, this review offers solid theoretical support and technical guidance for future development of high-performance hafnium-based ferroelectric devices.

源语言英语
文章编号100010
期刊Computational Materials Today
4
DOI
出版状态已出版 - 12月 2024

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