TY - JOUR
T1 - Physical origin of hafnium-based ferroelectricity
AU - Lv, Shuning
AU - Cao, Tengfei
AU - Wang, Zihe
AU - Xie, Tingxiao
AU - Gao, Shuang
AU - Teobaldi, Gilberto
AU - Hu, Qi
AU - Liu, Li Min
N1 - Publisher Copyright:
© 2024 The Authors
PY - 2024/12
Y1 - 2024/12
N2 - This review presents an overview of the developmental history of hafnium-based ferroelectric materials and their various potential applications. It delves into the origins of hafnium-based ferroelectric phases and summarizes recent research advancements from thermodynamic and kinetic perspectives. Additionally, it explores the crystal structures of hafnium-based ferroelectric materials, phase transition mechanisms influenced by phonons, polarization reversal, and the dynamic evolutions of ferroelectric domain boundaries. The review further examines different methods for controlling the stability and optimizing the performance of hafnium-based ferroelectric phases, including doping, stress modulation, oxygen vacancies, and interface effects. These techniques are vital for stabilizing the necessary ferroelectric phases and enhancing the electrical properties of the material significantly. By establishing a connection between theoretical and experimental studies of the origins of hafnium-based ferroelectrics, this review offers solid theoretical support and technical guidance for future development of high-performance hafnium-based ferroelectric devices.
AB - This review presents an overview of the developmental history of hafnium-based ferroelectric materials and their various potential applications. It delves into the origins of hafnium-based ferroelectric phases and summarizes recent research advancements from thermodynamic and kinetic perspectives. Additionally, it explores the crystal structures of hafnium-based ferroelectric materials, phase transition mechanisms influenced by phonons, polarization reversal, and the dynamic evolutions of ferroelectric domain boundaries. The review further examines different methods for controlling the stability and optimizing the performance of hafnium-based ferroelectric phases, including doping, stress modulation, oxygen vacancies, and interface effects. These techniques are vital for stabilizing the necessary ferroelectric phases and enhancing the electrical properties of the material significantly. By establishing a connection between theoretical and experimental studies of the origins of hafnium-based ferroelectrics, this review offers solid theoretical support and technical guidance for future development of high-performance hafnium-based ferroelectric devices.
KW - Density functional theory
KW - Ferroelectric origin
KW - Hafnium-based ferroelectricity
KW - HfO2
UR - https://www.scopus.com/pages/publications/105021092220
U2 - 10.1016/j.commt.2024.100010
DO - 10.1016/j.commt.2024.100010
M3 - 文献综述
AN - SCOPUS:105021092220
SN - 2950-4635
VL - 4
JO - Computational Materials Today
JF - Computational Materials Today
M1 - 100010
ER -