Photoluminescence study of optically trapped InP semiconductor nanowires

Fan Wang; Wen Jun Toe; Suriati Paiman; Qiang Gao; H. Hoe Tan; C. Jagadish; Peter J. Reece

doi:10.1109/COMMAD.2010.5699744

Photoluminescence study of optically trapped InP semiconductor nanowires

Fan Wang^*
, Wen Jun Toe
, Suriati Paiman
, Qiang Gao
, H. Hoe Tan
, C. Jagadish
, Peter J. Reece

^*此作品的通讯作者

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

2 引用（Scopus）

摘要

We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.

源语言	英语
主期刊名	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
页	211-212
页数	2
DOI	https://doi.org/10.1109/COMMAD.2010.5699744
出版状态	已出版 - 2010
已对外发布	是
活动	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, 澳大利亚期限: 12 12月 2010 → 15 12月 2010

出版系列

姓名	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

会议

会议	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
国家/地区	澳大利亚
市	Canberra, ACT
时期	12/12/10 → 15/12/10

访问文件

10.1109/COMMAD.2010.5699744

其它文件与链接

链接到 Scopus 的出版物

引用此

Wang, F., Toe, W. J., Paiman, S., Gao, Q., Tan, H. H., Jagadish, C., & Reece, P. J. (2010). Photoluminescence study of optically trapped InP semiconductor nanowires. 在 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (页码 211-212). 文章 5699744 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699744

@inproceedings{cf037cefded84344981ae22661439c8e,

title = "Photoluminescence study of optically trapped InP semiconductor nanowires",

abstract = "We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.",

author = "Fan Wang and Toe, \{Wen Jun\} and Suriati Paiman and Qiang Gao and Tan, \{H. Hoe\} and C. Jagadish and Reece, \{Peter J.\}",

year = "2010",

doi = "10.1109/COMMAD.2010.5699744",

language = "英语",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "211--212",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Wang, F, Toe, WJ, Paiman, S, Gao, Q, Tan, HH, Jagadish, C & Reece, PJ 2010, Photoluminescence study of optically trapped InP semiconductor nanowires. 在 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699744, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 页码 211-212, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, 澳大利亚, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699744

Photoluminescence study of optically trapped InP semiconductor nanowires. / Wang, Fan; Toe, Wen Jun; Paiman, Suriati 等.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. 页码 211-212 5699744 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Photoluminescence study of optically trapped InP semiconductor nanowires

AU - Wang, Fan

AU - Toe, Wen Jun

AU - Paiman, Suriati

AU - Gao, Qiang

AU - Tan, H. Hoe

AU - Jagadish, C.

AU - Reece, Peter J.

PY - 2010

Y1 - 2010

N2 - We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.

AB - We report on the optical characterisation of single indium phosphide (InP) semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studies were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from the nanowires trapped in solution shows a quenching of the initial intensity with a characteristic time scale of a few seconds. We observe stronger quenching effects in wurtzite nanowires which lead to a modification of the spectral shape in mixed phase nanowires.

UR - https://www.scopus.com/pages/publications/79951761217

U2 - 10.1109/COMMAD.2010.5699744

DO - 10.1109/COMMAD.2010.5699744

M3 - 会议稿件

AN - SCOPUS:79951761217

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 211

EP - 212

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Wang F, Toe WJ, Paiman S, Gao Q, Tan HH, Jagadish C 等. Photoluminescence study of optically trapped InP semiconductor nanowires. 在 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. 页码 211-212. 5699744. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699744

Photoluminescence study of optically trapped InP semiconductor nanowires

摘要

出版系列

会议

访问文件

其它文件与链接

指纹

引用此