@inproceedings{4b6cde2618a84521a43602c3e1b2a97d,
title = "Photoluminescence studies on porous silicon quantum confinement mechanism",
abstract = "A novel step-like and pinning behavior of photoluminescence peak energy connected with changes in the concentration of HF and current density were for the first time observed for p - type porous silicon. Based on a theoretical calculation of the electron structure of the silicon quantum wire it is argued that these behaviors can be explained in terms of a novel formation mechanism model of porous silicon.",
author = "Shulin Zhang and Kuoksan He and Yangtian Hou and Xin Wang and Jingjian Li and Peng Diao and Bidong Qian and Shengmin Cai and Akira Fujishijma",
year = "1993",
language = "英语",
isbn = "1558991948",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "123--128",
editor = "M.A. Tischler and R.T. Collins and M.L.W. Thewalt and G. Abstreiter",
booktitle = "Materials Research Society Symposium Proceedings",
note = "Proceedings of the Symposium on Silicon-Based Optoelectronic Materials ; Conference date: 12-04-1993 Through 14-04-1993",
}