Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy

H. Z. Xu; Z. G. Wang; I. Harrison; A. Bell; B. J. Ansell; A. J. Winser; T. S. Cheng; C. T. Foxon; M. Kawabe

doi:10.1016/S0022-0248(00)00526-1

Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy

H. Z. Xu
, Z. G. Wang
, I. Harrison
, A. Bell
, B. J. Ansell
, A. J. Winser
, T. S. Cheng
, C. T. Foxon
, M. Kawabe^*

^*此作品的通讯作者

CAS - Institute of Semiconductors
University of Nottingham
University of Tsukuba

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

Deep levels in undoped GaN materials grown by modified molecular beam epitaxy (MBE) are investigated by photoluminescence (PL) and optical quenching of photoconductivity measurements. A broad band which extends from 2.1 to 3.0 eV with a maximum at about 2.7 eV is observed, and four prominent quenching bands were found located at 2.18, 2.40, 2.71, and 2.78 eV above the valence band, respectively. These levels are attributed to four holes trap levels existence in the material. The defects cannot be firmly identified at present.

源语言	英语
页（从-至）	228-232
页数	5
期刊	Journal of Crystal Growth
卷	217
期	3
DOI	https://doi.org/10.1016/S0022-0248(00)00526-1
出版状态	已出版 - 1 8月 2000
已对外发布	是

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@article{5a598d724eb54356849a4517dd7a606a,

title = "Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy",

abstract = "Deep levels in undoped GaN materials grown by modified molecular beam epitaxy (MBE) are investigated by photoluminescence (PL) and optical quenching of photoconductivity measurements. A broad band which extends from 2.1 to 3.0 eV with a maximum at about 2.7 eV is observed, and four prominent quenching bands were found located at 2.18, 2.40, 2.71, and 2.78 eV above the valence band, respectively. These levels are attributed to four holes trap levels existence in the material. The defects cannot be firmly identified at present.",

keywords = "GaN, Molecular beam epitaxy, Native defect level, Optical quenching of photoconductivity, Photoluminescence",

author = "Xu, \{H. Z.\} and Wang, \{Z. G.\} and I. Harrison and A. Bell and Ansell, \{B. J.\} and Winser, \{A. J.\} and Cheng, \{T. S.\} and Foxon, \{C. T.\} and M. Kawabe",

year = "2000",

month = aug,

day = "1",

doi = "10.1016/S0022-0248(00)00526-1",

language = "英语",

volume = "217",

pages = "228--232",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy

AU - Xu, H. Z.

AU - Wang, Z. G.

AU - Harrison, I.

AU - Bell, A.

AU - Ansell, B. J.

AU - Winser, A. J.

AU - Cheng, T. S.

AU - Foxon, C. T.

AU - Kawabe, M.

PY - 2000/8/1

Y1 - 2000/8/1

N2 - Deep levels in undoped GaN materials grown by modified molecular beam epitaxy (MBE) are investigated by photoluminescence (PL) and optical quenching of photoconductivity measurements. A broad band which extends from 2.1 to 3.0 eV with a maximum at about 2.7 eV is observed, and four prominent quenching bands were found located at 2.18, 2.40, 2.71, and 2.78 eV above the valence band, respectively. These levels are attributed to four holes trap levels existence in the material. The defects cannot be firmly identified at present.

AB - Deep levels in undoped GaN materials grown by modified molecular beam epitaxy (MBE) are investigated by photoluminescence (PL) and optical quenching of photoconductivity measurements. A broad band which extends from 2.1 to 3.0 eV with a maximum at about 2.7 eV is observed, and four prominent quenching bands were found located at 2.18, 2.40, 2.71, and 2.78 eV above the valence band, respectively. These levels are attributed to four holes trap levels existence in the material. The defects cannot be firmly identified at present.

KW - GaN

KW - Molecular beam epitaxy

KW - Native defect level

KW - Optical quenching of photoconductivity

KW - Photoluminescence

UR - https://www.scopus.com/pages/publications/0008758424

U2 - 10.1016/S0022-0248(00)00526-1

DO - 10.1016/S0022-0248(00)00526-1

M3 - 文章

AN - SCOPUS:0008758424

SN - 0022-0248

VL - 217

SP - 228

EP - 232

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy

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