Photoelectrochemical properties of BiVO4 thin films with NaOH chemical treatment

Dong Dong Lv; Jiao Feng Liu; Zheng Zhang; Ying You Ma; Yan Liang; Zhi Tai Zhou; Wei Chang Hao

doi:10.1007/s12598-019-01210-9

Photoelectrochemical properties of BiVO₄ thin films with NaOH chemical treatment

Dong Dong Lv
, Jiao Feng Liu
, Zheng Zhang
, Ying You Ma
, Yan Liang
, Zhi Tai Zhou
, Wei Chang Hao^*

^*此作品的通讯作者

物理学院

Beihang University

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

BiVO₄ thin films were prepared by a mature and simple electrochemical deposition method on F-doped SnO₂ substrate electrode (FTO). The influence of a chemical treatment using sodium hydroxide (NaOH) on the photoelectrochemical properties of BiVO₄ thin films was studied. It was found that NaOH can etch the crystal surface of BiVO₄, which leads to the increase in specific surface area and improved photoelectrochemical activity. The photocurrent density of the BiVO₄ thin films showed an enhancement of photoelectronic current from 0.50 to 0.65 mA·cm^-2 at 1.23 V (vs. RHE) after the treatment for 5 h by NaOH, which supplies a stronger potential for H₂O oxidation.

源语言	英语
页（从-至）	446-452
页数	7
期刊	Rare Metals
卷	38
期	5
DOI	https://doi.org/10.1007/s12598-019-01210-9
出版状态	已出版 - 5月 2019

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10.1007/s12598-019-01210-9

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title = "Photoelectrochemical properties of BiVO4 thin films with NaOH chemical treatment",

abstract = "BiVO4 thin films were prepared by a mature and simple electrochemical deposition method on F-doped SnO2 substrate electrode (FTO). The influence of a chemical treatment using sodium hydroxide (NaOH) on the photoelectrochemical properties of BiVO4 thin films was studied. It was found that NaOH can etch the crystal surface of BiVO4, which leads to the increase in specific surface area and improved photoelectrochemical activity. The photocurrent density of the BiVO4 thin films showed an enhancement of photoelectronic current from 0.50 to 0.65 mA·cm-2 at 1.23 V (vs. RHE) after the treatment for 5 h by NaOH, which supplies a stronger potential for H2O oxidation.",

keywords = "BiVO, NaOH, Photoelectrochemical, Surface treatment",

author = "Lv, \{Dong Dong\} and Liu, \{Jiao Feng\} and Zheng Zhang and Ma, \{Ying You\} and Yan Liang and Zhou, \{Zhi Tai\} and Hao, \{Wei Chang\}",

note = "Publisher Copyright: {\textcopyright} The Nonferrous Metals Society of China and Springer-Verlag GmbH Germany, part of Springer Nature 2019.",

year = "2019",

month = may,

doi = "10.1007/s12598-019-01210-9",

language = "英语",

volume = "38",

pages = "446--452",

journal = "Rare Metals",

issn = "1001-0521",

publisher = "John Wiley and Sons Inc",

number = "5",

}

TY - JOUR

T1 - Photoelectrochemical properties of BiVO4 thin films with NaOH chemical treatment

AU - Lv, Dong Dong

AU - Liu, Jiao Feng

AU - Zhang, Zheng

AU - Ma, Ying You

AU - Liang, Yan

AU - Zhou, Zhi Tai

AU - Hao, Wei Chang

N1 - Publisher Copyright: © The Nonferrous Metals Society of China and Springer-Verlag GmbH Germany, part of Springer Nature 2019.

PY - 2019/5

Y1 - 2019/5

N2 - BiVO4 thin films were prepared by a mature and simple electrochemical deposition method on F-doped SnO2 substrate electrode (FTO). The influence of a chemical treatment using sodium hydroxide (NaOH) on the photoelectrochemical properties of BiVO4 thin films was studied. It was found that NaOH can etch the crystal surface of BiVO4, which leads to the increase in specific surface area and improved photoelectrochemical activity. The photocurrent density of the BiVO4 thin films showed an enhancement of photoelectronic current from 0.50 to 0.65 mA·cm-2 at 1.23 V (vs. RHE) after the treatment for 5 h by NaOH, which supplies a stronger potential for H2O oxidation.

AB - BiVO4 thin films were prepared by a mature and simple electrochemical deposition method on F-doped SnO2 substrate electrode (FTO). The influence of a chemical treatment using sodium hydroxide (NaOH) on the photoelectrochemical properties of BiVO4 thin films was studied. It was found that NaOH can etch the crystal surface of BiVO4, which leads to the increase in specific surface area and improved photoelectrochemical activity. The photocurrent density of the BiVO4 thin films showed an enhancement of photoelectronic current from 0.50 to 0.65 mA·cm-2 at 1.23 V (vs. RHE) after the treatment for 5 h by NaOH, which supplies a stronger potential for H2O oxidation.

KW - BiVO

KW - NaOH

KW - Photoelectrochemical

KW - Surface treatment

UR - https://www.scopus.com/pages/publications/85062949421

U2 - 10.1007/s12598-019-01210-9

DO - 10.1007/s12598-019-01210-9

M3 - 文章

AN - SCOPUS:85062949421

SN - 1001-0521

VL - 38

SP - 446

EP - 452

JO - Rare Metals

JF - Rare Metals

IS - 5

ER -

Photoelectrochemical properties of BiVO4 thin films with NaOH chemical treatment

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Photoelectrochemical properties of BiVO₄ thin films with NaOH chemical treatment