TY - JOUR
T1 - Phosphorus-doped bismuth telluride films by electrodeposition
AU - Zhou, Jian
AU - Lin, Qinghan
AU - Li, Hengyi
AU - Cheng, Xuan
PY - 2013/8/15
Y1 - 2013/8/15
N2 - Phosphorus-doped Bi2Te3 films were synthesized on a stainless-steel electrode by electrochemical deposition. X-ray diffraction, scanning electron microscopy and transmission electron microscopy confirmed that the films are single-phased Bi2Te3 solid solutions with a rhombohedral structure. The as-prepared films exhibit n-type characteristics with the Hall coefficient -1.76E-2 m3 C-1 and the electrical conductivity 280 S cm-1. The thermal conductivity is 0.47 W m-1 K-1, which is as low as one-third of the value observed in the bulk material. The doped P atoms occupy the interstitial positions between the two adjacent Te(1) layers connected by Van der Waals interaction in Bi2Te3
AB - Phosphorus-doped Bi2Te3 films were synthesized on a stainless-steel electrode by electrochemical deposition. X-ray diffraction, scanning electron microscopy and transmission electron microscopy confirmed that the films are single-phased Bi2Te3 solid solutions with a rhombohedral structure. The as-prepared films exhibit n-type characteristics with the Hall coefficient -1.76E-2 m3 C-1 and the electrical conductivity 280 S cm-1. The thermal conductivity is 0.47 W m-1 K-1, which is as low as one-third of the value observed in the bulk material. The doped P atoms occupy the interstitial positions between the two adjacent Te(1) layers connected by Van der Waals interaction in Bi2Te3
KW - A. Chalcogenides
KW - C. Electrochemical techniques
KW - C. Electron microscopy
KW - D. Electrical conductivity
KW - D. Thermal conductivity
UR - https://www.scopus.com/pages/publications/84879976805
U2 - 10.1016/j.matchemphys.2013.05.033
DO - 10.1016/j.matchemphys.2013.05.033
M3 - 文章
AN - SCOPUS:84879976805
SN - 0254-0584
VL - 141
SP - 401
EP - 405
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
IS - 1
ER -