跳到主要导航 跳到搜索 跳到主要内容

Perpendicular Anisotropic Magnetoresistance Induced by Surface Spin-Orbit Scattering in a MgO/Fe/Cu Heterostructure

  • Qianqian Liu
  • , Guang Yang
  • , Yi Wei Liu
  • , Yi Cao
  • , Jing Yan Zhang
  • , Ming Hua Li
  • , Lei Ding
  • , Dong Wei Wang
  • , Qian Zhan
  • , Chun Feng*
  • , Yue Dou Pan
  • , Guang Hua Yu
  • *此作品的通讯作者
  • University of Science and Technology Beijing
  • Hainan University
  • National Center for Nanoscience and Technology

科研成果: 期刊稿件文章同行评审

摘要

A large perpendicular anisotropic magnetoresistance (AMR) is obtained in a MgO/Fe/Cu heterostructure, with a maximum AMR ratio of 0.59%. The perpendicular AMR is approximately inversely dependent on the thickness of the Fe layer above 2.5 nm. It can be increased by enhanced structural asymmetry, which implies an interface effect mainly derived from interfacial Rashba spin-orbit scattering in the MgO/Fe/Cu heterostructure. The perpendicular AMR is temperature dependent.

源语言英语
文章编号7811223
期刊IEEE Magnetics Letters
8
DOI
出版状态已出版 - 2017
已对外发布

指纹

探究 'Perpendicular Anisotropic Magnetoresistance Induced by Surface Spin-Orbit Scattering in a MgO/Fe/Cu Heterostructure' 的科研主题。它们共同构成独一无二的指纹。

引用此