Paradigm of magnetic domain wall-based in-memory computing

While conventional microelectronic integrated circuits based on electron charges approach the theoretical limitations in foreseeable future, next-generation nonvolatile logic units based on electron spins have the potential to build logic networks of low power consumption. Central to this spin-based architecture is the development of a paradigm for in-memory computing with magnetic logic units. Here, we demonstrate the basic function of a transistor logic unit with patterned Y-shaped NiFe nanowires by gate-controlled domain-wall pinning and depinning. This spin-based architecture possesses the critical functionalities of transistors and can achieve a programmable logic gate by using only one Y-shaped nanostructure, which represents a universal design currently lacking for in-memory computing.