p-type doping of GaInNAs quaternary alloys

Hongliang Shi; Yifeng Duan

doi:10.1016/j.physleta.2008.11.010

p-type doping of GaInNAs quaternary alloys

Hongliang Shi^*
, Yifeng Duan

^*此作品的通讯作者

CAS - Institute of Semiconductors
China University of Mining and Technology

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga_{1 - x} In_x N_{1 - y} As_y quaternary alloys. We show that the Mg_Ga substitution is a better choice than Zn_Ga to realize the p-type doping because of the lower transition energy level and lower formation energy. The natural valence band alignment of GaAs and GaInNAs alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing In composition. Therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices.

源语言	英语
页（从-至）	165-168
页数	4
期刊	Physics Letters, Section A: General, Atomic and Solid State Physics
卷	373
期	1
DOI	https://doi.org/10.1016/j.physleta.2008.11.010
出版状态	已出版 - 22 12月 2008
已对外发布	是

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abstract = "Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga1 - x Inx N1 - y Asy quaternary alloys. We show that the MgGa substitution is a better choice than ZnGa to realize the p-type doping because of the lower transition energy level and lower formation energy. The natural valence band alignment of GaAs and GaInNAs alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing In composition. Therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices.",

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T1 - p-type doping of GaInNAs quaternary alloys

AU - Shi, Hongliang

AU - Duan, Yifeng

PY - 2008/12/22

Y1 - 2008/12/22

N2 - Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga1 - x Inx N1 - y Asy quaternary alloys. We show that the MgGa substitution is a better choice than ZnGa to realize the p-type doping because of the lower transition energy level and lower formation energy. The natural valence band alignment of GaAs and GaInNAs alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing In composition. Therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices.

AB - Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga1 - x Inx N1 - y Asy quaternary alloys. We show that the MgGa substitution is a better choice than ZnGa to realize the p-type doping because of the lower transition energy level and lower formation energy. The natural valence band alignment of GaAs and GaInNAs alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing In composition. Therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices.

KW - Alloy

KW - Band offset

KW - Doping

KW - First-principles

KW - Formation energy

KW - Transition energy

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DO - 10.1016/j.physleta.2008.11.010

M3 - 文章

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SN - 0375-9601

VL - 373

SP - 165

EP - 168

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 1

ER -

p-type doping of GaInNAs quaternary alloys

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