Oxygen atom diffusion-driven anomalous Hall behavior in Co/Pt multilayers

Shao Long Jiang; Xi Chen; Jing Yan Zhang; Guang Yang; Jiao Teng; Xu Jing Li; Yi Cao; Qian Qian Liu; Kang Yang; Chen Hu; Guang Hua Yu

doi:10.1016/j.tsf.2015.02.064

Oxygen atom diffusion-driven anomalous Hall behavior in Co/Pt multilayers

Shao Long Jiang
, Xi Chen
, Jing Yan Zhang
, Guang Yang
, Jiao Teng
, Xu Jing Li
, Yi Cao
, Qian Qian Liu
, Kang Yang
, Chen Hu
, Guang Hua Yu^*

^*此作品的通讯作者

University of Science and Technology Beijing

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

Abstract Anomalous Hall effect (AHE) studies have been carried out in Co/Pt multilayers prepared by magnetron sputtering under annealing. The AHE behavior can be deteriorated by annealing in Pt/[Co/Pt]₃/Pt thin films, while saturation anomalous Hall resistivity in MgO/[Co/Pt]₃/MgO multilayers after annealing at 623 K for 30 min is 124% larger than that in the as-deposited films. The X-ray photoelectron spectroscopy analysis exhibits that the increased AHE is primarily ascribed to annealing dependent oxygen atom diffusion at the Co/MgO interface.

源语言	英语
文章编号	34144
页（从-至）	123-126
页数	4
期刊	Thin Solid Films
卷	579
DOI	https://doi.org/10.1016/j.tsf.2015.02.064
出版状态	已出版 - 31 3月 2015
已对外发布	是

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@article{6b85be5bde014f5f9d013d393960bd26,

title = "Oxygen atom diffusion-driven anomalous Hall behavior in Co/Pt multilayers",

abstract = "Abstract Anomalous Hall effect (AHE) studies have been carried out in Co/Pt multilayers prepared by magnetron sputtering under annealing. The AHE behavior can be deteriorated by annealing in Pt/[Co/Pt]3/Pt thin films, while saturation anomalous Hall resistivity in MgO/[Co/Pt]3/MgO multilayers after annealing at 623 K for 30 min is 124\% larger than that in the as-deposited films. The X-ray photoelectron spectroscopy analysis exhibits that the increased AHE is primarily ascribed to annealing dependent oxygen atom diffusion at the Co/MgO interface.",

keywords = "Anomalous Hall effect, Co/Pt multilayers, Oxygen atom diffusion, X-ray photoelectron spectroscopy",

author = "Jiang, \{Shao Long\} and Xi Chen and Zhang, \{Jing Yan\} and Guang Yang and Jiao Teng and Li, \{Xu Jing\} and Yi Cao and Liu, \{Qian Qian\} and Kang Yang and Chen Hu and Yu, \{Guang Hua\}",

year = "2015",

month = mar,

day = "31",

doi = "10.1016/j.tsf.2015.02.064",

language = "英语",

volume = "579",

pages = "123--126",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Oxygen atom diffusion-driven anomalous Hall behavior in Co/Pt multilayers

AU - Jiang, Shao Long

AU - Chen, Xi

AU - Zhang, Jing Yan

AU - Yang, Guang

AU - Teng, Jiao

AU - Li, Xu Jing

AU - Cao, Yi

AU - Liu, Qian Qian

AU - Yang, Kang

AU - Hu, Chen

AU - Yu, Guang Hua

PY - 2015/3/31

Y1 - 2015/3/31

N2 - Abstract Anomalous Hall effect (AHE) studies have been carried out in Co/Pt multilayers prepared by magnetron sputtering under annealing. The AHE behavior can be deteriorated by annealing in Pt/[Co/Pt]3/Pt thin films, while saturation anomalous Hall resistivity in MgO/[Co/Pt]3/MgO multilayers after annealing at 623 K for 30 min is 124% larger than that in the as-deposited films. The X-ray photoelectron spectroscopy analysis exhibits that the increased AHE is primarily ascribed to annealing dependent oxygen atom diffusion at the Co/MgO interface.

AB - Abstract Anomalous Hall effect (AHE) studies have been carried out in Co/Pt multilayers prepared by magnetron sputtering under annealing. The AHE behavior can be deteriorated by annealing in Pt/[Co/Pt]3/Pt thin films, while saturation anomalous Hall resistivity in MgO/[Co/Pt]3/MgO multilayers after annealing at 623 K for 30 min is 124% larger than that in the as-deposited films. The X-ray photoelectron spectroscopy analysis exhibits that the increased AHE is primarily ascribed to annealing dependent oxygen atom diffusion at the Co/MgO interface.

KW - Anomalous Hall effect

KW - Co/Pt multilayers

KW - Oxygen atom diffusion

KW - X-ray photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/84926303490

U2 - 10.1016/j.tsf.2015.02.064

DO - 10.1016/j.tsf.2015.02.064

M3 - 文章

AN - SCOPUS:84926303490

SN - 0040-6090

VL - 579

SP - 123

EP - 126

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 34144

ER -

Oxygen atom diffusion-driven anomalous Hall behavior in Co/Pt multilayers

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