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Origin of low thermal conductivity in SnSe

  • Beihang University
  • Southern University of Science and Technology
  • Shenzhen Key Laboratory of Thermoelectric Materials
  • Chongqing University
  • CAS - Institute of Solid State Physics
  • University of Science and Technology of China

科研成果: 期刊稿件文章同行评审

摘要

We provide direct evidence to understand the origin of low thermal conductivity of SnSe using elastic measurements. Compared to state-of-the-art lead chalcogenides PbQ(Q=Te, Se, S), SnSe exhibits low values of sound velocity (∼1420m/s), Young's modulus (E∼27.7GPa), and shear modulus (G∼9.6GPa), which are ascribed to the extremely weak Sn-Se atomic interactions (or bonds between layers); meanwhile, the deduced average Grüneisen parameter γ of SnSe is as large as ∼3.13, originating from the strong anharmonicity of the bonding arrangement. The calculated phonon mean free path (l ∼ 0.84 nm) at 300 K is comparable to the lattice parameters of SnSe, indicating little room is left for further reduction of the thermal conductivity through introducing nanoscale microstructures and microscale grain boundaries. The low elastic properties indicate that the weak chemical bonding stiffness of SnSe generally causes phonon modes softening which eventually slows down phonon propagation. This work provides insightful data to understand the low lattice thermal conductivity of SnSe.

源语言英语
文章编号125203
期刊Physical Review B
94
12
DOI
出版状态已出版 - 12 9月 2016

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