Oriented AlN films prepared with solid AlCl3 source by bias assisted Cat-CVD

A. P. Huang; G. J. Wang; S. L. Xu; M. K. Zhu; G. H. Li; B. Wang; H. Yan

doi:10.1016/j.mseb.2003.10.085

Oriented AlN films prepared with solid AlCl₃ source by bias assisted Cat-CVD

A. P. Huang
, G. J. Wang
, S. L. Xu
, M. K. Zhu
, G. H. Li
, B. Wang^*
, H. Yan

^*此作品的通讯作者

Beijing University of Technology
Liaocheng University

科研成果: 期刊稿件 › 文章 › 同行评审

14 引用（Scopus）

摘要

In this paper, aluminum nitride (AlN) films have been successfully synthesized by taking solid AlCl₃ as the source of atomic aluminum, with negative bias assisted catalytic chemical vapor deposition (Cat-CVD) on Si(100) substrate at low temperatures. Nitrogen (N₂) and hydrogen (H₂) were used as gas precursors. The results show that by using AlCl₃ as the aluminum source AlN films with preferential orientation can be obtained under negative bias assistance by Cat-CVD. The effects of the bias during the deposition process are discussed in details.

源语言	英语
页（从-至）	161-165
页数	5
期刊	Materials Science and Engineering: B
卷	107
期	2
DOI	https://doi.org/10.1016/j.mseb.2003.10.085
出版状态	已出版 - 15 3月 2004
已对外发布	是

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@article{50d6ebe7cd7242018d5a38159bc8a09b,

title = "Oriented AlN films prepared with solid AlCl3 source by bias assisted Cat-CVD",

abstract = "In this paper, aluminum nitride (AlN) films have been successfully synthesized by taking solid AlCl3 as the source of atomic aluminum, with negative bias assisted catalytic chemical vapor deposition (Cat-CVD) on Si(100) substrate at low temperatures. Nitrogen (N2) and hydrogen (H2) were used as gas precursors. The results show that by using AlCl3 as the aluminum source AlN films with preferential orientation can be obtained under negative bias assistance by Cat-CVD. The effects of the bias during the deposition process are discussed in details.",

keywords = "AlN, Cat-CVD, Orientation, Substrate bias",

author = "Huang, \{A. P.\} and Wang, \{G. J.\} and Xu, \{S. L.\} and Zhu, \{M. K.\} and Li, \{G. H.\} and B. Wang and H. Yan",

year = "2004",

month = mar,

day = "15",

doi = "10.1016/j.mseb.2003.10.085",

language = "英语",

volume = "107",

pages = "161--165",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

publisher = "Elsevier Ltd",

number = "2",

}

TY - JOUR

T1 - Oriented AlN films prepared with solid AlCl3 source by bias assisted Cat-CVD

AU - Huang, A. P.

AU - Wang, G. J.

AU - Xu, S. L.

AU - Zhu, M. K.

AU - Li, G. H.

AU - Wang, B.

AU - Yan, H.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - In this paper, aluminum nitride (AlN) films have been successfully synthesized by taking solid AlCl3 as the source of atomic aluminum, with negative bias assisted catalytic chemical vapor deposition (Cat-CVD) on Si(100) substrate at low temperatures. Nitrogen (N2) and hydrogen (H2) were used as gas precursors. The results show that by using AlCl3 as the aluminum source AlN films with preferential orientation can be obtained under negative bias assistance by Cat-CVD. The effects of the bias during the deposition process are discussed in details.

AB - In this paper, aluminum nitride (AlN) films have been successfully synthesized by taking solid AlCl3 as the source of atomic aluminum, with negative bias assisted catalytic chemical vapor deposition (Cat-CVD) on Si(100) substrate at low temperatures. Nitrogen (N2) and hydrogen (H2) were used as gas precursors. The results show that by using AlCl3 as the aluminum source AlN films with preferential orientation can be obtained under negative bias assistance by Cat-CVD. The effects of the bias during the deposition process are discussed in details.

KW - AlN

KW - Cat-CVD

KW - Orientation

KW - Substrate bias

UR - https://www.scopus.com/pages/publications/1242264815

U2 - 10.1016/j.mseb.2003.10.085

DO - 10.1016/j.mseb.2003.10.085

M3 - 文章

AN - SCOPUS:1242264815

SN - 0921-5107

VL - 107

SP - 161

EP - 165

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 2

ER -

Oriented AlN films prepared with solid AlCl3 source by bias assisted Cat-CVD

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Oriented AlN films prepared with solid AlCl₃ source by bias assisted Cat-CVD