Orientational self-assembled field-effect transistors based on a single-walled carbon nanotube

We fabricate single-walled carbon nanotube field-effect transistors (SWNT FETs) with a simple, low-cost, high-efficiency, and solution-based orientational self-assembly method. The SWNT was first functionalized with thiol groups, then suspended in an N,N-dimethylformamide solution, and finally self-assembled on predefined gold contact pads by an orientational N2 blow. A relatively high mobility of 9.2× 102 cm2 V s and an onoff ratio greater than 105 at a bias voltage of -1 V have been achieved as a result of directly covalent interaction between end-thiolated SWNT and gold contacts, which favors the fabrication of SWNT FETs as compared to the SWNT FETs bearing the similar geometry but relies on random deposition. Therefore, this orientational self-assembly approach should be a valuable tool in the mass fabrication of high-performance SWNT FETs and SWNT-based molecular-scale electronic devices.