Organic light emitting complementary inverters

Ebinazar B. Namdas; Ifor D.W. Samuel; Deepak Shukla; Dianne M. Meyer; Yanming Sun; Ben B.Y. Hsu; Daniel Moses; Alan J. Heeger

doi:10.1063/1.3293293

Organic light emitting complementary inverters

Ebinazar B. Namdas
, Ifor D.W. Samuel
, Deepak Shukla
, Dianne M. Meyer
, Yanming Sun
, Ben B.Y. Hsu
, Daniel Moses
, Alan J. Heeger

University of California at Santa Barbara
University of St Andrews
Eastman Kodak

科研成果: 期刊稿件 › 文章 › 同行评审

32 引用（Scopus）

摘要

We show that p- and n-type light emitting field-effect transistors (LEFETs) can be made using "superyellow" as a light-emitting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as a p-type material and a naphthalene di-imide as an n-type material. By connecting two of these LEFETs, we have demonstrated a light emitting complementary inverter (LECI). The LECI exhibited electrical and optical characteristics in the first and third quadrant of the transfer characteristics with voltage gain of 6 and 8, respectively.

源语言	英语
文章编号	043304
期刊	Applied Physics Letters
卷	96
期	4
DOI	https://doi.org/10.1063/1.3293293
出版状态	已出版 - 2010
已对外发布	是

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abstract = "We show that p- and n-type light emitting field-effect transistors (LEFETs) can be made using {"}superyellow{"} as a light-emitting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as a p-type material and a naphthalene di-imide as an n-type material. By connecting two of these LEFETs, we have demonstrated a light emitting complementary inverter (LECI). The LECI exhibited electrical and optical characteristics in the first and third quadrant of the transfer characteristics with voltage gain of 6 and 8, respectively.",

author = "Namdas, \{Ebinazar B.\} and Samuel, \{Ifor D.W.\} and Deepak Shukla and Meyer, \{Dianne M.\} and Yanming Sun and Hsu, \{Ben B.Y.\} and Daniel Moses and Heeger, \{Alan J.\}",

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AU - Namdas, Ebinazar B.

AU - Samuel, Ifor D.W.

AU - Shukla, Deepak

AU - Meyer, Dianne M.

AU - Sun, Yanming

AU - Hsu, Ben B.Y.

AU - Moses, Daniel

AU - Heeger, Alan J.

PY - 2010

Y1 - 2010

N2 - We show that p- and n-type light emitting field-effect transistors (LEFETs) can be made using "superyellow" as a light-emitting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as a p-type material and a naphthalene di-imide as an n-type material. By connecting two of these LEFETs, we have demonstrated a light emitting complementary inverter (LECI). The LECI exhibited electrical and optical characteristics in the first and third quadrant of the transfer characteristics with voltage gain of 6 and 8, respectively.

AB - We show that p- and n-type light emitting field-effect transistors (LEFETs) can be made using "superyellow" as a light-emitting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) as a p-type material and a naphthalene di-imide as an n-type material. By connecting two of these LEFETs, we have demonstrated a light emitting complementary inverter (LECI). The LECI exhibited electrical and optical characteristics in the first and third quadrant of the transfer characteristics with voltage gain of 6 and 8, respectively.

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SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Organic light emitting complementary inverters

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