TY - JOUR
T1 - Orbital Origin of the Intrinsic Planar Hall Effect
AU - Wang, Hui
AU - Huang, Yue Xin
AU - Liu, Huiying
AU - Feng, Xiaolong
AU - Zhu, Jiaojiao
AU - Wu, Weikang
AU - Xiao, Cong
AU - Yang, Shengyuan A.
N1 - Publisher Copyright:
© 2024 American Physical Society.
PY - 2024/2/2
Y1 - 2024/2/2
N2 - Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. Here, we develop a general theory for the intrinsic planar Hall effect (IPHE), highlighting a previously unknown orbital mechanism and connecting it to a band geometric quantity - the anomalous orbital polarizability (AOP). Importantly, the orbital mechanism does not request spin-orbit coupling, so sizable IPHE can occur and is dominated by an orbital contribution in systems with weak spin-orbit coupling. Combined with first-principles calculations, we demonstrate our theory with quantitative evaluation for bulk materials TaSb2, NbAs2, and SrAs3. We further show that AOP and its associated orbital IPHE can be greatly enhanced at topological band crossings, offering a new way to probe topological materials.
AB - Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. Here, we develop a general theory for the intrinsic planar Hall effect (IPHE), highlighting a previously unknown orbital mechanism and connecting it to a band geometric quantity - the anomalous orbital polarizability (AOP). Importantly, the orbital mechanism does not request spin-orbit coupling, so sizable IPHE can occur and is dominated by an orbital contribution in systems with weak spin-orbit coupling. Combined with first-principles calculations, we demonstrate our theory with quantitative evaluation for bulk materials TaSb2, NbAs2, and SrAs3. We further show that AOP and its associated orbital IPHE can be greatly enhanced at topological band crossings, offering a new way to probe topological materials.
UR - https://www.scopus.com/pages/publications/85183977003
U2 - 10.1103/PhysRevLett.132.056301
DO - 10.1103/PhysRevLett.132.056301
M3 - 文章
C2 - 38364160
AN - SCOPUS:85183977003
SN - 0031-9007
VL - 132
JO - Physical Review Letters
JF - Physical Review Letters
IS - 5
M1 - 056301
ER -