TY - JOUR
T1 - Online Junction Temperature Estimation Method for SiC MOSFETs Based on the DC Bus Voltage Undershoot
AU - Yang, Yanyong
AU - Wu, Yang
AU - Ding, Xiaofeng
AU - Zhang, Pinjia
N1 - Publisher Copyright:
© 1986-2012 IEEE.
PY - 2023/4/1
Y1 - 2023/4/1
N2 - Silicon carbide (SiC) power devices are promising in industrial applications. Junction temperature monitoring is greatly significant for improving the reliability of devices and systems. However, state-of-the-art SiC MOSFET junction temperature estimation methods generally have drawbacks of low resolution, difficult measurement, and complicated installation. In this article, a novel junction temperature estimation for SiC MOSFETs based on the dc bus voltage undershoot is proposed. The correlation between junction temperature and current change rate is analyzed and verified by experiments. The current change rate of each SiC MOSFET can be measured via the dc bus voltage undershoot because of the stray inductance of the bus commutation loop. The undershoot of the dc bus voltage during the turn-on transient displays a linear dependence on the junction temperatures of the corresponding SiC MOSFET. Hence, the dc bus voltage undershoot can be utilized for monitoring the junction temperatures of two SiC MOSFETs in the half-bridge. Besides, practical implementation and estimation errors are presented. The method proposed has high accuracy and resolution for junction temperature monitoring. Besides, the method proposed can reduce the complexity, size, and cost of the monitoring circuit. Moreover, the method proposed is noninvasive and easy to install. It is promising for SiC MOSFET junction temperature monitoring in practical applications.
AB - Silicon carbide (SiC) power devices are promising in industrial applications. Junction temperature monitoring is greatly significant for improving the reliability of devices and systems. However, state-of-the-art SiC MOSFET junction temperature estimation methods generally have drawbacks of low resolution, difficult measurement, and complicated installation. In this article, a novel junction temperature estimation for SiC MOSFETs based on the dc bus voltage undershoot is proposed. The correlation between junction temperature and current change rate is analyzed and verified by experiments. The current change rate of each SiC MOSFET can be measured via the dc bus voltage undershoot because of the stray inductance of the bus commutation loop. The undershoot of the dc bus voltage during the turn-on transient displays a linear dependence on the junction temperatures of the corresponding SiC MOSFET. Hence, the dc bus voltage undershoot can be utilized for monitoring the junction temperatures of two SiC MOSFETs in the half-bridge. Besides, practical implementation and estimation errors are presented. The method proposed has high accuracy and resolution for junction temperature monitoring. Besides, the method proposed can reduce the complexity, size, and cost of the monitoring circuit. Moreover, the method proposed is noninvasive and easy to install. It is promising for SiC MOSFET junction temperature monitoring in practical applications.
KW - Monitoring
KW - power semiconductor devices
KW - reliability
KW - silicon carbide (SiC)
KW - temperature measurement
UR - https://www.scopus.com/pages/publications/85147228033
U2 - 10.1109/TPEL.2023.3235729
DO - 10.1109/TPEL.2023.3235729
M3 - 文章
AN - SCOPUS:85147228033
SN - 0885-8993
VL - 38
SP - 5422
EP - 5431
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
IS - 4
ER -