@inproceedings{9ecc3e779e124f96a1784a07c6704ccb,
title = "On the Safe Operating Area of InP HBTs",
abstract = "The safe-operating area of an advanced InP HBT technology is studied experimentally using pulsed, DC and RF as well as load-pull measurements. To study the implications of the results on circuit performance, a power amplifier cell is analyzed using HICUM/L2. Safe-operating-area related consequences for circuit design, technology development, compact modeling and device characterization are outlined.",
keywords = "compact modeling, HBT, HICUM, InP HBT, load-pull, self-heating, SOA, thermal runaway",
author = "Markus M{\"u}ller and Sebastien Fregonese and Christoph Weimer and Guangsheng Liang and Xiaodi Jin and Maximilian Froitzheim and Thomas Zimmer and Michael Schroter",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024 ; Conference date: 27-10-2024 Through 30-10-2024",
year = "2024",
doi = "10.1109/BCICTS59662.2024.10745684",
language = "英语",
series = "2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "290--293",
booktitle = "2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024",
address = "美国",
}