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Observation of the Out-of-Plane Polarized Spin Current from CVD Grown WTe2

  • Shuyuan Shi
  • , Jie Li
  • , Chuang Han Hsu
  • , Kyusup Lee
  • , Yi Wang
  • , Li Yang
  • , Junyong Wang
  • , Qisheng Wang
  • , Hao Wu
  • , Wenfeng Zhang
  • , Goki Eda
  • , Gengchiau Liang
  • , Haixin Chang*
  • , Hyunsoo Yang*
  • *此作品的通讯作者
  • National University of Singapore
  • Huazhong University of Science and Technology
  • Academia Sinica - Institute of Physics
  • Dalian University of Technology

科研成果: 期刊稿件文章同行评审

摘要

Weyl semimetal Td-phase WTe2 possesses the spin-resolved band structure with strong spin–orbit coupling, holding promises as a useful spin source material. The noncentrosymmetric crystalline structure of Td-WTe2 endows the generation of the out-of-plane polarized spin, which is of great interest in magnetic memory applications. Previously, WTe2 was explored in spin devices based on mechanically exfoliated single crystal flakes with a size of micrometers. For practical spintronics applications, it is highly desirable to implement wafer-scale thin films. In this work, centimeter-scale chemical vapor deposition (CVD) grown Td-WTe2 thin films are used and the spin current generation is studied by the spin torque ferromagnetic resonance (ST-FMR) technique. The in-plane and out-of-plane spin conductivities of 7.36 × 103 ((Formula presented.)) (Ωm)–1 and 1.76 × 103 ((Formula presented.)) (Ωm)–1, respectively, are found in CVD-growth 5 nm-WTe2. The current-induced magnetization switching in WTe2/NiFe is demonstrated at room temperature in the domain wall motion regime, which may invigorate potential spintronic device innovations based on Weyl semimetals.

源语言英语
文章编号2100038
期刊Advanced Quantum Technologies
4
8
DOI
出版状态已出版 - 8月 2021
已对外发布

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