Numerical simulation of a P⁺ a-SiC:H/N⁺ poly-Si solar cell with high efficiency and fill factor

The P⁺ a-SiC:H/N⁺ poly-Si solar cell is simulated by an AMPS-1D device simulator to characterize the new thin film polycrystalline-silicon solar cell. In order to analyze the characteristics of the device, the thickness, working temperature, and impurity concentration for the N⁺ polysilicon layer are considered. The results show that the performance of the cells shows little change when the thickness of N⁺ polysilicon varies from 10 to 30 μm. It is concluded that the P⁺ a-SiC:H/N⁺ poly-Si solar cell has the highest performance with high open circuit voltages (V_oc) of 1.31 V, high conversion efficiency of 17.363% and high fill factor of 0.884. Therefore, the P⁺ a-SiC:H/N⁺ poly-Si solar cell has promising future applications.