Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs

Lei Shu; Liang Wang; Xin Zhou; Tong De Li; Zhang Yi an Yuan; Cheng Long Sui; Yuan Li; Bi Wang; Yuan Fu Zhao; Kenneth F. Galloway

doi:10.1109/TNS.2019.2905218

Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs

Lei Shu
, Liang Wang
, Xin Zhou
, Tong De Li
, Zhang Yi an Yuan
, Cheng Long Sui
, Yuan Li
, Bi Wang
, Yuan Fu Zhao
, Kenneth F. Galloway^*

^*此作品的通讯作者

集成电路科学与工程学院

Harbin Institute of Technology
Beijing Microelectronics Technology Institute
University of Electronic Science and Technology of China
Beijing University of Technology
Vanderbilt University

科研成果: 期刊稿件 › 文章 › 同行评审

25 引用（Scopus）

摘要

The breakdown voltage (BV_DS) variation of 400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistors (NLDMOSFETs) is examined after exposure to a total ionizing dose (TID). The results for OFF bias and ON bias are explored. For the OFF bias, BV_DS increases first and then degrades with accumulated dose. For the ON bias, the irradiated device shows soft breakdown after irradiation. The physical mechanisms for these variations are analyzed and confirmed by technology computer-aided design (TCAD) simulation.

源语言	英语
文章编号	8667859
页（从-至）	710-715
页数	6
期刊	IEEE Transactions on Nuclear Science
卷	66
期	4
DOI	https://doi.org/10.1109/TNS.2019.2905218
出版状态	已出版 - 4月 2019

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10.1109/TNS.2019.2905218

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@article{58c39df51a9940229ada8e12a88393ac,

title = "Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs",

abstract = "The breakdown voltage (BVDS) variation of 400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistors (NLDMOSFETs) is examined after exposure to a total ionizing dose (TID). The results for OFF bias and ON bias are explored. For the OFF bias, BVDS increases first and then degrades with accumulated dose. For the ON bias, the irradiated device shows soft breakdown after irradiation. The physical mechanisms for these variations are analyzed and confirmed by technology computer-aided design (TCAD) simulation.",

keywords = "400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET), BVDS variations, SOI, laterally diffused metal-oxide-semiconductor (LDMOS), radiation effects, technology computer-aided design (TCAD) simulations, total ionizing dose (TID)",

author = "Lei Shu and Liang Wang and Xin Zhou and Li, \{Tong De\} and Yuan, \{Zhang Yi an\} and Sui, \{Cheng Long\} and Yuan Li and Bi Wang and Zhao, \{Yuan Fu\} and Galloway, \{Kenneth F.\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2019",

month = apr,

doi = "10.1109/TNS.2019.2905218",

language = "英语",

volume = "66",

pages = "710--715",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

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T1 - Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs

AU - Shu, Lei

AU - Wang, Liang

AU - Zhou, Xin

AU - Li, Tong De

AU - Yuan, Zhang Yi an

AU - Sui, Cheng Long

AU - Li, Yuan

AU - Wang, Bi

AU - Zhao, Yuan Fu

AU - Galloway, Kenneth F.

PY - 2019/4

Y1 - 2019/4

N2 - The breakdown voltage (BVDS) variation of 400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistors (NLDMOSFETs) is examined after exposure to a total ionizing dose (TID). The results for OFF bias and ON bias are explored. For the OFF bias, BVDS increases first and then degrades with accumulated dose. For the ON bias, the irradiated device shows soft breakdown after irradiation. The physical mechanisms for these variations are analyzed and confirmed by technology computer-aided design (TCAD) simulation.

AB - The breakdown voltage (BVDS) variation of 400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistors (NLDMOSFETs) is examined after exposure to a total ionizing dose (TID). The results for OFF bias and ON bias are explored. For the OFF bias, BVDS increases first and then degrades with accumulated dose. For the ON bias, the irradiated device shows soft breakdown after irradiation. The physical mechanisms for these variations are analyzed and confirmed by technology computer-aided design (TCAD) simulation.

KW - 400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET)

KW - BVDS variations

KW - SOI

KW - laterally diffused metal-oxide-semiconductor (LDMOS)

KW - radiation effects

KW - technology computer-aided design (TCAD) simulations

KW - total ionizing dose (TID)

UR - https://www.scopus.com/pages/publications/85064664916

U2 - 10.1109/TNS.2019.2905218

DO - 10.1109/TNS.2019.2905218

M3 - 文章

AN - SCOPUS:85064664916

SN - 0018-9499

VL - 66

SP - 710

EP - 715

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 4

M1 - 8667859

ER -

Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs

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