Novel Latin square matrix code of large burst error correction for MRAM applications

With the scaling down of the technology node of complementary metal–oxide–semiconductor (CMOS), the bit error rate (BER) of magnetic random memory (MRAM) seriously threats the reliability, especially multiple-cell upset (MBUs). Error correction codes (ECCs) such as one-step majority logic decodable (OS-MLD) codes are proposed with strong error correction capabilities, and efficient hardware overhead. However, the OS-MLD codes are not suitable for the burst error correction, which require more redundancy bits or extra memory cells. A novel m order Latin square matrix (LSM) codes for MRAM are presented, which can provide fewer equivalent bits and more flexible adjustments for correcting large burst errors. The 5-bit LSM code area is only 90898.71 μm², and the power consumption is only 0.82 mw.