摘要
A novel pixel circuit with a bulk-driven technique is proposed for high image quality organic light-emitting diode-on-silicon (OLEDoS) microdisplays. The proposed pixel circuit based on bulk-driven technique achieves a wide input voltage range and nanoampere (nA) emission current. The experiment results based on the 0.18 μm 1P5M CMOS process is demonstrated. The input data voltage width of the proposed circuit is approximately 2.6 V. The ratio of the input voltage range to the supply voltage based on bulk-driven 4T1C is 78.82%.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 529-535 |
| 页数 | 7 |
| 期刊 | Journal of the Society for Information Display |
| 卷 | 27 |
| 期 | 9 |
| DOI | |
| 出版状态 | 已出版 - 9月 2019 |
学术指纹
探究 'Novel 4T1C pixel circuit for high image quality OLEDoS microdisplays' 的科研主题。它们共同构成独一无二的学术指纹。引用此
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver