Nonlinear optical response of strain-mediated gallium arsenide microwire in the near-infrared region

Gallium arsenide (GaAs) semiconductor wires have emerged as potent candidates for nonlinear optical devices, necessitating bandgap engineering for an expanded operational wavelength range. We report the successful growth of strain-mediated GaAs microwires (MWs) with an average diameter of 1.1 μm. The axial tensile strain in these wires, as measured by X-ray diffraction and Raman scattering, ranges from 1.61 % to 1.95 % and from 1.44 % to 2.03 %, respectively. This strain condition significantly reduces the bandgap of GaAs MWs compared to bulk GaAs, enabling a response wavelength extension up to 1.1 μm. Open aperture Z-scan measurements reveal a nonlinear absorption coefficient of -15.9 cm/MW and a third-order magnetic susceptibility of -2.8 × 10-8 esu at 800 nm for these MWs. I-scan measurements further show that the GaAs saturable absorber has a modulation depth of 7.9 % and a nonsaturation loss of 3.3 % at 1050 nm. In laser applications, GaAs MWs have been effectively used as saturable absorbers for achieving Q-switched and dual-wavelength synchronous mode-locking operations in Yb-bulk lasers. These results not only offer new insights into the use of large diameter semiconductor wires but also expand the potential for applications requiring bandgap tuning.