Near-Perfect Standard Ternary Inverter Based on MoTe₂ Homojunction Anti-Ambipolar Transistor

Ternary inverters offer a promising solution to enhance information processing density and efficiency while reducing system complexity, addressing energy density limitations in complementary metal-oxide-semiconductor technology in the post-Moore era. Among these, the standard ternary inverter (STI) is particularly appealing due to its symmetry and reliability in ternary logic operations, though its fabrication remains challenging. Here, a controllable and process-compatible doping technique is reported that combines rapid thermal annealing with h-BN-assisted ultraviolet photoinduced doping to achieve area-selective p-type and n-type doping on a single MoTe₂ flake. This approach enables the fabrication of high-performance anti-ambipolar transistors (AATs) and unipolar p-type field-effect transistors (FETs) based on MoTe₂ homojunctions. By achieving near-perfect conductance matching between connected AATs and p-type FETs, an STI with a highly uniform staircase transfer characteristic and an intermediate state width of precisely one-third of the input voltage range is demonstrated. The AATs also exhibit a peak-to-valley ratio exceeding 10³, rapid transconductance reversal, and tunable peak positions, enabling the development of high-performance frequency doublers without additional voltage bias. This study presents a novel doping strategy for efficient STI and multifunctional device fabrication, advancing the development of next-generation electronic technologies.