Nd-substituted SrBi2Ta2O9 ferroelectric thin films prepared by radio frequency magnetron sputtering

Yibin Li; Sam Zhang; Weidong Fei; Thirumany Sritharan; Cong Xu

doi:10.1016/j.tsf.2007.04.032

Nd-substituted SrBi₂Ta₂O₉ ferroelectric thin films prepared by radio frequency magnetron sputtering

Yibin Li
, Sam Zhang^*
, Weidong Fei
, Thirumany Sritharan
, Cong Xu

^*此作品的通讯作者

Nanyang Technological University
Harbin Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

Nd-substituted SrBi₂Ta₂O₉ (SNBT) thin films are sputtered on Pt/Ta/SiO₂/Si substrates. X-ray diffraction and x-ray photoelectron spectroscopy studies indicate that Nd³⁺ is substituted into the bismuth layered perovskite structure, preferentially at the Sr²⁺ site. The annealed thin film is polycrystalline with plate/needle-like grain microstructure. Secondary ion mass spectrometry results show that elements in SNBT thin film homogeneously distribute along film depth and interfacial diffusion takes place during post annealing. The Nd substitution leads to enhanced remnant polarization (2P_r = 18 μC/cm²) and reduced coercivity (2E_c = 64 kV/cm) at 180 kV/cm measured at 25 °C. After 10¹⁰ switching cycles, around 9% remnant polarization is decreased.

源语言	英语
页（从-至）	8371-8375
页数	5
期刊	Thin Solid Films
卷	515
期	23
DOI	https://doi.org/10.1016/j.tsf.2007.04.032
出版状态	已出版 - 14 9月 2007
已对外发布	是

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10.1016/j.tsf.2007.04.032

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@article{bc068f759bd84a77a5bc1d8e915c3680,

title = "Nd-substituted SrBi2Ta2O9 ferroelectric thin films prepared by radio frequency magnetron sputtering",

abstract = "Nd-substituted SrBi2Ta2O9 (SNBT) thin films are sputtered on Pt/Ta/SiO2/Si substrates. X-ray diffraction and x-ray photoelectron spectroscopy studies indicate that Nd3+ is substituted into the bismuth layered perovskite structure, preferentially at the Sr2+ site. The annealed thin film is polycrystalline with plate/needle-like grain microstructure. Secondary ion mass spectrometry results show that elements in SNBT thin film homogeneously distribute along film depth and interfacial diffusion takes place during post annealing. The Nd substitution leads to enhanced remnant polarization (2Pr = 18 μC/cm2) and reduced coercivity (2Ec = 64 kV/cm) at 180 kV/cm measured at 25 °C. After 1010 switching cycles, around 9\% remnant polarization is decreased.",

keywords = "Coercivity, Magnetron sputtering, Remnant polarization, SBT thin film, Substitution",

author = "Yibin Li and Sam Zhang and Weidong Fei and Thirumany Sritharan and Cong Xu",

year = "2007",

month = sep,

day = "14",

doi = "10.1016/j.tsf.2007.04.032",

language = "英语",

volume = "515",

pages = "8371--8375",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "23",

}

TY - JOUR

T1 - Nd-substituted SrBi2Ta2O9 ferroelectric thin films prepared by radio frequency magnetron sputtering

AU - Li, Yibin

AU - Zhang, Sam

AU - Fei, Weidong

AU - Sritharan, Thirumany

AU - Xu, Cong

PY - 2007/9/14

Y1 - 2007/9/14

N2 - Nd-substituted SrBi2Ta2O9 (SNBT) thin films are sputtered on Pt/Ta/SiO2/Si substrates. X-ray diffraction and x-ray photoelectron spectroscopy studies indicate that Nd3+ is substituted into the bismuth layered perovskite structure, preferentially at the Sr2+ site. The annealed thin film is polycrystalline with plate/needle-like grain microstructure. Secondary ion mass spectrometry results show that elements in SNBT thin film homogeneously distribute along film depth and interfacial diffusion takes place during post annealing. The Nd substitution leads to enhanced remnant polarization (2Pr = 18 μC/cm2) and reduced coercivity (2Ec = 64 kV/cm) at 180 kV/cm measured at 25 °C. After 1010 switching cycles, around 9% remnant polarization is decreased.

AB - Nd-substituted SrBi2Ta2O9 (SNBT) thin films are sputtered on Pt/Ta/SiO2/Si substrates. X-ray diffraction and x-ray photoelectron spectroscopy studies indicate that Nd3+ is substituted into the bismuth layered perovskite structure, preferentially at the Sr2+ site. The annealed thin film is polycrystalline with plate/needle-like grain microstructure. Secondary ion mass spectrometry results show that elements in SNBT thin film homogeneously distribute along film depth and interfacial diffusion takes place during post annealing. The Nd substitution leads to enhanced remnant polarization (2Pr = 18 μC/cm2) and reduced coercivity (2Ec = 64 kV/cm) at 180 kV/cm measured at 25 °C. After 1010 switching cycles, around 9% remnant polarization is decreased.

KW - Coercivity

KW - Magnetron sputtering

KW - Remnant polarization

KW - SBT thin film

KW - Substitution

UR - https://www.scopus.com/pages/publications/34548636720

U2 - 10.1016/j.tsf.2007.04.032

DO - 10.1016/j.tsf.2007.04.032

M3 - 文章

AN - SCOPUS:34548636720

SN - 0040-6090

VL - 515

SP - 8371

EP - 8375

JO - Thin Solid Films

JF - Thin Solid Films

IS - 23

ER -

Nd-substituted SrBi2Ta2O9 ferroelectric thin films prepared by radio frequency magnetron sputtering

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Nd-substituted SrBi₂Ta₂O₉ ferroelectric thin films prepared by radio frequency magnetron sputtering