Nanotubular ZrTiO₄ Prepared on Sputter Deposited Zr−Ti Films by Anodization

Highly ordered nanotubular ZrTiO₄ thin films were synthesized by directly anodizing co-sputtered Zr−Ti films deposited on silicon substrates. The crystals of as-deposited Zr−Ti films preferred (002) orientation was beneficial to the nanotubular structure formation. The adjusted anodization potential and composition of Zr−Ti films resulted in a controllable nanotube diameter that ranges from approximately 45 nm to 110 nm. The thickness of as-deposited Zr−Ti films and growth rates determined the length of nanotubular structure (1.7–4.5 μm). The decreased Ti content in the deposited Zr−Ti films lead to a higher nanotube growth rate due to the lower binding energy of Ti and oxygen. The higher Zr content in the Zr−Ti films was responsible for the crystalized nanotubular ZrTiO₄ after anodization.