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MRAM crossbar based configurable logic block

  • Yahya Lakys*
  • , Weisheng Zhao
  • , Jacques Olivier Klein
  • , Claude Chappert
  • *此作品的通讯作者
  • Université Paris-Saclay

科研成果: 会议稿件论文同行评审

摘要

Spintronics-based non-volatile storage devices promise great potential to be integrated in reconfigurable circuits to overcome the major hurdles related to conventional flash and SRAM memories, such as low logic density, high standby power and long (re) boot latency. In this paper, we describe a compact design of configurable logic block based on Magnetic RAM (MRAM) crossbar architecture. The logic density can be increased greatly ( 5 times) compared to conventional designs; the standby power can be nearly zero thanks to the non-volatility of MRAM. Its high speed and power efficiency (10.4 Tera-OPS/Watt in computing mode) are also demonstrated through mixed CMOS/Magnetic spice simulations. Fully dynamic reconfiguration through context switching is also studied, which could be achieved with low area overhead.

源语言英语
2945-2948
页数4
DOI
出版状态已出版 - 2012
已对外发布
活动2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, 韩国
期限: 20 5月 201223 5月 2012

会议

会议2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012
国家/地区韩国
Seoul
时期20/05/1223/05/12

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