Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films

Peng Wu; T. Tiedje; H. Alimohammadi; V. Bahrami-Yekta; M. Masnadi-Shirazi; Cong Wang

doi:10.1088/0268-1242/31/10/10LT01

Molecular beam epitaxy growth and optical properties of single crystal Zn₃N₂ films

Peng Wu
, T. Tiedje
, H. Alimohammadi
, V. Bahrami-Yekta
, M. Masnadi-Shirazi
, Cong Wang

集成电路科学与工程学院

科研成果: 期刊稿件 › 文章 › 同行评审

18 引用（Scopus）

摘要

Single crystal Zn₃N₂ films with (100) orientation have been grown by plasma-assisted molecular beam epitaxy on MgO and A-plane sapphire substrates with in situ optical reflectance monitoring of the growth. The optical bandgap was found to be 1.25-1.28 eV and an electron Hall mobility as high as 395 cm² V^-1 s^-1 was measured. The films were n-type with carrier concentrations in the 10¹⁸-10¹⁹ cm^-3 range.

源语言	英语
文章编号	10LT01
期刊	Semiconductor Science and Technology
卷	31
期	10
DOI	https://doi.org/10.1088/0268-1242/31/10/10LT01
出版状态	已出版 - 15 9月 2016

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10.1088/0268-1242/31/10/10LT01

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@article{043f98de7e124ef99de863cdcaf786e4,

title = "Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films",

abstract = "Single crystal Zn3N2 films with (100) orientation have been grown by plasma-assisted molecular beam epitaxy on MgO and A-plane sapphire substrates with in situ optical reflectance monitoring of the growth. The optical bandgap was found to be 1.25-1.28 eV and an electron Hall mobility as high as 395 cm2 V-1 s-1 was measured. The films were n-type with carrier concentrations in the 1018-1019 cm-3 range.",

keywords = "molecular beam epitaxy, optical properties, semiconductor, zinc nitride",

author = "Peng Wu and T. Tiedje and H. Alimohammadi and V. Bahrami-Yekta and M. Masnadi-Shirazi and Cong Wang",

note = "Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2016",

month = sep,

day = "15",

doi = "10.1088/0268-1242/31/10/10LT01",

language = "英语",

volume = "31",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "10",

}

TY - JOUR

T1 - Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films

AU - Wu, Peng

AU - Tiedje, T.

AU - Alimohammadi, H.

AU - Bahrami-Yekta, V.

AU - Masnadi-Shirazi, M.

AU - Wang, Cong

PY - 2016/9/15

Y1 - 2016/9/15

N2 - Single crystal Zn3N2 films with (100) orientation have been grown by plasma-assisted molecular beam epitaxy on MgO and A-plane sapphire substrates with in situ optical reflectance monitoring of the growth. The optical bandgap was found to be 1.25-1.28 eV and an electron Hall mobility as high as 395 cm2 V-1 s-1 was measured. The films were n-type with carrier concentrations in the 1018-1019 cm-3 range.

AB - Single crystal Zn3N2 films with (100) orientation have been grown by plasma-assisted molecular beam epitaxy on MgO and A-plane sapphire substrates with in situ optical reflectance monitoring of the growth. The optical bandgap was found to be 1.25-1.28 eV and an electron Hall mobility as high as 395 cm2 V-1 s-1 was measured. The films were n-type with carrier concentrations in the 1018-1019 cm-3 range.

KW - molecular beam epitaxy

KW - optical properties

KW - semiconductor

KW - zinc nitride

UR - https://www.scopus.com/pages/publications/84989949274

U2 - 10.1088/0268-1242/31/10/10LT01

DO - 10.1088/0268-1242/31/10/10LT01

M3 - 文章

AN - SCOPUS:84989949274

SN - 0268-1242

VL - 31

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 10

M1 - 10LT01

ER -

Molecular beam epitaxy growth and optical properties of single crystal Zn3N2 films

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Molecular beam epitaxy growth and optical properties of single crystal Zn₃N₂ films