摘要
A new topological crystalline insulator material, SnSe in the rock-salt structure, is obtained using molecular beam epitaxy. The thermodynamically unstable rock-salt SnSe phase is stabilized in epitaxial films up to 20 nm by a Bi2Se3 substrate. Dirac surface states are observed at both the Γ¯ and the M¯ points using angle-resolved photoemission spectroscopy; this confirms the topological crystalline insulator phase of the films.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 4150-4154 |
| 页数 | 5 |
| 期刊 | Advanced Materials |
| 卷 | 27 |
| 期 | 28 |
| DOI |
|
| 出版状态 | 已出版 - 1 7月 2015 |
| 已对外发布 | 是 |
学术指纹
探究 'Molecular Beam Epitaxy-Grown SnSe in the Rock-Salt Structure: An Artificial Topological Crystalline Insulator Material' 的科研主题。它们共同构成独一无二的学术指纹。引用此
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