Modeling and Measurement of Electromagnetic Susceptibility Transfer for LDO Chips

Electromagnetic susceptibility (EMS) modeling of integrated circuits (ICs) is crucial to ensure the electromagnetic compatibility (EMC) of electronic systems. In complex circuits, the EMS response of ICs is modified by transfer effects introduced by peripheral circuitry, which leads to discrepancies between modeled and observed susceptibility. This article proposes a modeling approach to characterize the EMS transfer behavior of low dropout regulators (LDO). The proposed method enables the prediction of the EMS threshold of LDO chips with peripheral circuitry based on standalone chip-level EMS models. Experiments are conducted to demonstrate the effectiveness of the proposed method and confirm the accuracy of the EMS threshold predictions after considering transfer effects.