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Metallic state in La-doped YBa 2Cu 3O y thin films with n-type charge carriers

  • S. W. Zeng*
  • , X. Wang
  • , W. M. Lü
  • , Z. Huang
  • , M. Motapothula
  • , Z. Q. Liu
  • , Y. L. Zhao
  • , A. Annadi
  • , S. Dhar
  • , H. Mao
  • , W. Chen
  • , T. Venkatesan
  • , Ariando
  • *此作品的通讯作者
  • National University of Singapore

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

We report hole and electron doping in La-doped YBa 2Cu 3O y (YBCO) thin films synthesized by the pulsed laser deposition technique and subsequent in situ postannealing in ambient oxygen and vaccum. The n-type samples show a metallic behavior below the Mott limit and a high carrier density of ∼2.8×1021 cm -3 at room temperature (T) at the optimally reduced condition. The in-plane resistivity(ρ ab) of the n-type samples exhibits a quadratic T dependence in the moderate-T range and shows an anomaly at a relatively higher T probably related to pseudogap formation analogous to underdoped Nd 2-xCe xCuO 4 (NCCO). Furthermore, ρ ab(T), T c, and T with minimum resistivity (T min) were investigated in both p and n sides. The present results reveal the n-p asymmetry (symmetry) within the metallic-state region in an underdoped cuprate and suggest the potential toward ambipolar superconductivity in a single YBCO system.

源语言英语
期刊论文编号045124
期刊Physical Review B - Condensed Matter and Materials Physics
卷86
期4
DOI
出版状态已出版 - 20 7月 2012
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