Memory effect in standard spin valve structures

Memory effect has been observed in both standard top and bottom spin valves. The change of the magnetization state in the pinned FM layer, below the blocking temperature, reverses the direction of the exchange bias and destroys the magnetoresistance properties. This reversed exchange bias is much weaker, causing severe consequences in SV applications. This behavior can be explained in terms of blocking temperature distribution in the AFM layer perhaps due to the structural randomness. By varying cooling procedures, the exchange coupling in regions with different blocking temperatures can be separated. It is found that the maximum exchange bias is very close to the sum of the exchange biases in different regions. The domain wall energy in the FM layer has to be taken into account in order to explain the behavior of the reversed bias. The insertion of a synthetic antiferromagnetic subsystem (Co/Ru/Co) stabilizes the magnetization state in the pinned layer because of the additional interlayer coupling through the Ru layer. This suppresses the memory effect.