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Mechanical properties of hydrogenated nanocrystalline silicon thin film studied by finite element method

  • X. Wang
  • , J. Wang*
  • , S. Yang
  • *此作品的通讯作者
  • Beihang University

科研成果: 期刊稿件文章同行评审

摘要

In this research, hydrogenated nanocrystalline silicon (nc-Si:H) thin films were fabricated by using plasma enhanced chemical vapour deposition system. The finite element model of nanoindentation was established to simulate the mechanical properties of a nc-Si:H thin film. By comparing numerical simulation data with experimental data, the correctness of the model was validated. The mechanical properties of nc-Si:H thin films obtained were: Young's modulus of 45 GPa, yield stress of 4·5 MPa, Poisson's ratio of 0·3 and the hardness was calculated to be 2·5 GPa.

源语言英语
页(从-至)S41017-S41020
期刊Materials Research Innovations
18
DOI
出版状态已出版 - 1 7月 2014

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