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Magnetic skyrmion transistor: Skyrmion motion in a voltage-gated nanotrack

  • Xichao Zhang
  • , Yan Zhou*
  • , Motohiko Ezawa
  • , G. P. Zhao
  • , Weisheng Zhao
  • *此作品的通讯作者
  • The University of Hong Kong
  • The University of Tokyo
  • Sichuan Normal University
  • CAS - Ningbo Institute of Material Technology and Engineering

科研成果: 期刊稿件文章同行评审

摘要

Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices.

源语言英语
文章编号11369
期刊Scientific Reports
5
DOI
出版状态已出版 - 18 6月 2015

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