摘要
Magnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 11369 |
| 期刊 | Scientific Reports |
| 卷 | 5 |
| DOI | |
| 出版状态 | 已出版 - 18 6月 2015 |
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