TY - JOUR
T1 - Low-Temperature-Sintered Nano-Ag Film for Power Electronics Packaging
AU - Ma, Limin
AU - Wang, Yuchen
AU - Jia, Qiang
AU - Zhang, Hongqiang
AU - Wang, Yishu
AU - Li, Dan
AU - Zou, Guisheng
AU - Guo, Fu
N1 - Publisher Copyright:
© 2023, The Minerals, Metals & Materials Society.
PY - 2024/1
Y1 - 2024/1
N2 - Nano-Ag paste sintering has attracted much attention for high-power electronics packaging owing to its excellent electrical conductivity, thermal conductivity, and oxidation resistance. However, it requires printing and pre-heating before the die attach process, and the organics in the paste do not evaporate easily for large-area die attachment. In this work, a nano-Ag film (~ 100 μm thickness) with only 2.1% organics is developed to realize low-temperature bonding, which is compatible with the current sintering bonding process. The optimized preparation parameters of the nano-Ag films was optimized as 180°C-5 min. The characteristics and sintering mechanism of nano-Ag film are discussed. The results showed that the micro/nanostructure on the surface of nano-Ag film with a small amount of organic material is responsible for the low-temperature sintering ability, which realized 24.01 MPa shear strength at 200°C. The fracture was analyzed and failure modes are discussed. The easy-to-use features and low-temperature sintering ability make the nano-Ag film a promising die-attach material with high reliability. Graphical Abstract: [Figure not available: see fulltext.]
AB - Nano-Ag paste sintering has attracted much attention for high-power electronics packaging owing to its excellent electrical conductivity, thermal conductivity, and oxidation resistance. However, it requires printing and pre-heating before the die attach process, and the organics in the paste do not evaporate easily for large-area die attachment. In this work, a nano-Ag film (~ 100 μm thickness) with only 2.1% organics is developed to realize low-temperature bonding, which is compatible with the current sintering bonding process. The optimized preparation parameters of the nano-Ag films was optimized as 180°C-5 min. The characteristics and sintering mechanism of nano-Ag film are discussed. The results showed that the micro/nanostructure on the surface of nano-Ag film with a small amount of organic material is responsible for the low-temperature sintering ability, which realized 24.01 MPa shear strength at 200°C. The fracture was analyzed and failure modes are discussed. The easy-to-use features and low-temperature sintering ability make the nano-Ag film a promising die-attach material with high reliability. Graphical Abstract: [Figure not available: see fulltext.]
KW - low-temperature bonding
KW - mechanical properties
KW - Nano-Ag films
KW - sintering mechanism
UR - https://www.scopus.com/pages/publications/85174563229
U2 - 10.1007/s11664-023-10763-6
DO - 10.1007/s11664-023-10763-6
M3 - 文章
AN - SCOPUS:85174563229
SN - 0361-5235
VL - 53
SP - 228
EP - 237
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 1
ER -