Low temperature electrical and photo-responsive properties of MoSe ₂

MoSe₂ was fabricated by a facile hydrothermal method, and a simple device based on it was prepared to investigate the low temperature electrical and photo-responsive (PR) properties. PR current of MoSe₂ under 650 nm red illumination is 2.55 × 10^-5 A and remains approximately at low temperatures, which demonstrates its fine PR property. As the temperature became lower, electrical conductivity of MoSe₂ first decreased from 300 to 43 K and then increased at temperatures from 43 to 13 K. Mechanisms of such electrical and PR phenomenon were proposed. Our findings revealed potential method to adjust band gap of transition metal dichalcogenides and demonstrated their potential applications under special environment.