Low temperature cu/ga solid–liquid inter-diffusion bonding used for interfacial heat transfer in high-power devices

Interfacial heat transfer is essential for the development of high-power devices with high heat flux. The metallurgical bonding of Cu substrates is successfully realized by using a self-made interlayer at 10^◦ C, without any flux, by Cu/Ga solid-liquid inter-diffusion bonding (SLID), which can be used for the joining of heat sinks and power devices. The microstructure and properties of the joints were investigated, and the mechanism of Cu/Ga SLID bonding was discussed. The results show that the average shear strength of the joints is 7.9 MPa, the heat-resistant temperature is 200^◦ C, and the thermal contact conductance is 83,541 W/(m2·K) with a holding time of 30 h at the bonding temperature of 100^◦ C. The fracture occurs on one side of the copper wire mesh which is caused by the residual gallium. The microstructure is mainly composed of uniform θ-CuGa₂ phase, in addition to a small amount of residual copper, residual gallium and γ₃-Cu₉ Ga₄ phase. The interaction product of Cu and Ga is mainly θ-CuGa₂ phase, with only a small amount of γ₃-Cu₉ Ga₄ phase occurring at the temperature of 100^◦ C for 20 h. The process of Cu/Ga SLID bonding can be divided into three stages as follows: the pressurization stage, the reaction diffusion stage and the isothermal solidification stage. This technology can meet our requirements of low temperature bonding, high reliability service and interfacial heat transfer enhancement.