Long wavelength InP-based micromachined photodetector

Wen Juan Wang; Cheng Huang; Hui Huang; Yong Qing Huang; Bin Chen; Zhen Zhou; Xiao Min Ren

doi:10.1117/12.635425

Long wavelength InP-based micromachined photodetector

Wen Juan Wang^*
, Cheng Huang
, Hui Huang
, Yong Qing Huang
, Bin Chen
, Zhen Zhou
, Xiao Min Ren

^*此作品的通讯作者

Beijing University of Posts and Telecommunications

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

A novel InP-based micromechanied tunable photodetector with the structure of OMITMC (One-Mrror-Inclined Three-Mirror-Cavity)is presented. The tuning characteristic of the device is analysed in the way of electrical actuation. Through simulation of the filter transmission spectra and the quantum efficiency, the characteristics of high tunability, narrow bandwidth and high quantum efficiency are analysed As a result, the photodetector is tuned with 30nm,with a quantum efficiency of 59% and a linewidth of 1.2nm, when actuated by 10 volts.

源语言	英语
期刊论文编号	602022
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	6020
DOI	https://doi.org/10.1117/12.635425
出版状态	已出版 - 2005
已对外发布	是
活动	Optoelectronic Materials and Devices for Optical Communications - Shanghai, 中国期限: 7 11月 2005 → 10 11月 2005

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title = "Long wavelength InP-based micromachined photodetector",

abstract = "A novel InP-based micromechanied tunable photodetector with the structure of OMITMC (One-Mrror-Inclined Three-Mirror-Cavity)is presented. The tuning characteristic of the device is analysed in the way of electrical actuation. Through simulation of the filter transmission spectra and the quantum efficiency, the characteristics of high tunability, narrow bandwidth and high quantum efficiency are analysed As a result, the photodetector is tuned with 30nm,with a quantum efficiency of 59\% and a linewidth of 1.2nm, when actuated by 10 volts.",

keywords = "Micromachined, Photodetector, Tunable",

author = "Wang, \{Wen Juan\} and Cheng Huang and Hui Huang and Huang, \{Yong Qing\} and Bin Chen and Zhen Zhou and Ren, \{Xiao Min\}",

year = "2005",

doi = "10.1117/12.635425",

language = "英语",

volume = "6020",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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publisher = "SPIE",

note = "Optoelectronic Materials and Devices for Optical Communications ; Conference date: 07-11-2005 Through 10-11-2005",

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TY - JOUR

T1 - Long wavelength InP-based micromachined photodetector

AU - Wang, Wen Juan

AU - Huang, Cheng

AU - Huang, Hui

AU - Huang, Yong Qing

AU - Chen, Bin

AU - Zhou, Zhen

AU - Ren, Xiao Min

PY - 2005

Y1 - 2005

N2 - A novel InP-based micromechanied tunable photodetector with the structure of OMITMC (One-Mrror-Inclined Three-Mirror-Cavity)is presented. The tuning characteristic of the device is analysed in the way of electrical actuation. Through simulation of the filter transmission spectra and the quantum efficiency, the characteristics of high tunability, narrow bandwidth and high quantum efficiency are analysed As a result, the photodetector is tuned with 30nm,with a quantum efficiency of 59% and a linewidth of 1.2nm, when actuated by 10 volts.

AB - A novel InP-based micromechanied tunable photodetector with the structure of OMITMC (One-Mrror-Inclined Three-Mirror-Cavity)is presented. The tuning characteristic of the device is analysed in the way of electrical actuation. Through simulation of the filter transmission spectra and the quantum efficiency, the characteristics of high tunability, narrow bandwidth and high quantum efficiency are analysed As a result, the photodetector is tuned with 30nm,with a quantum efficiency of 59% and a linewidth of 1.2nm, when actuated by 10 volts.

KW - Micromachined

KW - Photodetector

KW - Tunable

UR - https://www.scopus.com/pages/publications/33644988437

U2 - 10.1117/12.635425

DO - 10.1117/12.635425

M3 - 会议文章

AN - SCOPUS:33644988437

SN - 0277-786X

VL - 6020

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 602022

T2 - Optoelectronic Materials and Devices for Optical Communications

Y2 - 7 November 2005 through 10 November 2005

ER -

Long wavelength InP-based micromachined photodetector

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