Lithium ion trapping mechanism of SiO                         2                          in LiCoO                         2                          based memristors

Qi Hu; Runmiao Li; Xinjiang Zhang; Qin Gao; Mei Wang; Hongliang Shi; Zhisong Xiao; Paul K. Chu; Anping Huang

doi:10.1038/s41598-019-41508-3

Lithium ion trapping mechanism of SiO ₂ in LiCoO ₂ based memristors

Qi Hu
, Runmiao Li
, Xinjiang Zhang
, Qin Gao
, Mei Wang
, Hongliang Shi
, Zhisong Xiao
, Paul K. Chu
, Anping Huang^*

^*此作品的通讯作者

物理学院

Beihang University
City University of Hong Kong

科研成果: 期刊稿件 › 文章 › 同行评审

22 引用（Scopus）

摘要

Pt/LiCoO ₂ /SiO ₂ /Si stacks with different SiO ₂ thicknesses are fabricated and the influence of SiO ₂ on memristive behavior is investigated. It is demonstrated that SiO ₂ can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO ₂ must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO ₂ based memristors. The simulation results show that SiO ₂ trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO ₂ . This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO ₂ in LiCoO ₂ based memristors.

源语言	英语
文章编号	5081
期刊	Scientific Reports
卷	9
期	1
DOI	https://doi.org/10.1038/s41598-019-41508-3
出版状态	已出版 - 1 12月 2019

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10.1038/s41598-019-41508-3

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Hu, Q., Li, R., Zhang, X., Gao, Q., Wang, M., Shi, H., Xiao, Z., Chu, P. K., & Huang, A. (2019). Lithium ion trapping mechanism of SiO ₂ in LiCoO ₂ based memristors Scientific Reports, 9(1), 文章 5081. https://doi.org/10.1038/s41598-019-41508-3

@article{bdba0c4bd4d740709674cde2202680c8,

title = " Lithium ion trapping mechanism of SiO 2 in LiCoO 2 based memristors ",

abstract = " Pt/LiCoO 2 /SiO 2 /Si stacks with different SiO 2 thicknesses are fabricated and the influence of SiO 2 on memristive behavior is investigated. It is demonstrated that SiO 2 can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO 2 must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO 2 based memristors. The simulation results show that SiO 2 trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO 2 . This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO 2 in LiCoO 2 based memristors.",

author = "Qi Hu and Runmiao Li and Xinjiang Zhang and Qin Gao and Mei Wang and Hongliang Shi and Zhisong Xiao and Chu, \{Paul K.\} and Anping Huang",

note = "Publisher Copyright: {\textcopyright} 2019, The Author(s).",

year = "2019",

month = dec,

day = "1",

doi = "10.1038/s41598-019-41508-3",

language = "英语",

volume = "9",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Research",

number = "1",

}

Hu, Q, Li, R, Zhang, X, Gao, Q, Wang, M , Shi, H, Xiao, Z, Chu, PK & Huang, A 2019, ' Lithium ion trapping mechanism of SiO ₂ in LiCoO ₂ based memristors ', Scientific Reports, 卷 9, 号码 1, 5081. https://doi.org/10.1038/s41598-019-41508-3

Lithium ion trapping mechanism of SiO ₂ in LiCoO ₂ based memristors . / Hu, Qi; Li, Runmiao; Zhang, Xinjiang 等.
在: Scientific Reports, 卷 9, 号码 1, 5081, 01.12.2019.

科研成果: 期刊稿件 › 文章 › 同行评审

TY - JOUR

T1 - Lithium ion trapping mechanism of SiO 2 in LiCoO 2 based memristors

AU - Hu, Qi

AU - Li, Runmiao

AU - Zhang, Xinjiang

AU - Gao, Qin

AU - Wang, Mei

AU - Shi, Hongliang

AU - Xiao, Zhisong

AU - Chu, Paul K.

AU - Huang, Anping

PY - 2019/12/1

Y1 - 2019/12/1

N2 - Pt/LiCoO 2 /SiO 2 /Si stacks with different SiO 2 thicknesses are fabricated and the influence of SiO 2 on memristive behavior is investigated. It is demonstrated that SiO 2 can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO 2 must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO 2 based memristors. The simulation results show that SiO 2 trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO 2 . This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO 2 in LiCoO 2 based memristors.

AB - Pt/LiCoO 2 /SiO 2 /Si stacks with different SiO 2 thicknesses are fabricated and the influence of SiO 2 on memristive behavior is investigated. It is demonstrated that SiO 2 can serve as Li ion trapping layer benefiting device retention, and the thickness of SiO 2 must be controlled to avoid large SET voltage and state instability. Simulation model based on Nernst potential and diffusion potential is postulated for electromotive force in LiCoO 2 based memristors. The simulation results show that SiO 2 trapping layer decreases the total electromotive field of device and thereby prevents Li ions from migrating back to LiCoO 2 . This model shows a good agreement with experimental data and reveals the Li ion trapping mechanism of SiO 2 in LiCoO 2 based memristors.

UR - https://www.scopus.com/pages/publications/85063592325

U2 - 10.1038/s41598-019-41508-3

DO - 10.1038/s41598-019-41508-3

M3 - 文章

C2 - 30911041

AN - SCOPUS:85063592325

SN - 2045-2322

VL - 9

JO - Scientific Reports

JF - Scientific Reports

IS - 1

M1 - 5081

ER -

Lithium ion trapping mechanism of SiO 2 in LiCoO 2 based memristors

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Lithium ion trapping mechanism of SiO ₂ in LiCoO ₂ based memristors